Bi2Se3 Nanolayer Growth on 2D Printed Graphene
Научная публикация
| Журнал |
Crystal Growth and Design
ISSN: 1528-7483
, E-ISSN: 1528-7505
|
| Вых. Данные |
Год: 2022,
Том: 22,
Номер: 9,
Страницы: 5335–5344
Страниц
: 10
DOI:
10.1021/acs.cgd.2c00431
|
| Ключевые слова |
Additives; Bismuth compounds; Carrier mobility; Chemical vapor deposition; Crystallites; Graphene; Solar energy; Transparent electrodes |
| Авторы |
Antonova Irina V.
1,2
,
Kokh Konstantin A.
3,4,6
,
Nebogatikova Nadezhda A.
1
,
Suprun Evgenii A.
5
,
Golyashov Vladimir A.
1,3,7
,
Tereshchenko Oleg E.
1,3,7
|
| Организации |
| 1 |
Rzhanov Institute of Semiconductor Physics SB RAS, 630090, Novosibirsk, Russia
|
| 2 |
Novosibirsk State Technical University, 630087, Novosibirsk, Russia
|
| 3 |
Novosibirsk State University, 630090, Novosibirsk, Russia
|
| 4 |
Sobolev Institute of Geology and Mineralogy SB RAS, 630090, Novosibirsk, Russia
|
| 5 |
Boreskov Institute of Catalysis SB RAS, 630090, Novosibirsk, Russia
|
| 6 |
Kemerovo State University, 650000, Kemerovo, Russia
|
| 7 |
Synchrotron radiation facility SKIF, Boreskov Institute of Catalysis SB RAS, 630559, Kol'tsovo, Russia
|
|
Информация о финансировании (6)
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1
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Министерство науки и высшего образования Российской Федерации (с 15 мая 2018)
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0239-2021-0003
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|
2
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Российский фонд фундаментальных исследований
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18-29-12094 (АААА-А19-119062590020-1)
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|
3
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Российский фонд фундаментальных исследований
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21-52-12024 (121022500006-9)
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|
4
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Министерство науки и высшего образования Российской Федерации (с 15 мая 2018)
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|
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5
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Министерство науки и высшего образования Российской Федерации (с 15 мая 2018)
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ГЗ-2021-2023
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|
6
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Министерство науки и высшего образования Российской Федерации (с 15 мая 2018)
|
0242-2021-0009 (121052600074-4) (FWGW-2021-0009)
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We studied Bi2Se3 films grown by vapor deposition at 500 °C on layers of printed graphene (the low-cost variant of multigraphene film). Using two-dimensional (2D)-printed graphene to manage the configuration of selective growth of Bi2Se3 films, in combination with capillary effect conditions, makes it possible to form continuous films with a thickness of 8 nm or more and crystallites several times larger than those grown without using the capillary effect. For Bi2Se3 films with a thickness of 20–30 nm, the sheet resistance is 1–3 kΩ/sq, the carrier density is ∼ (2–4) × 1012 cm–2, and the electron mobility at room temperature is 1100–2400 cm2/Vs. The properties of layers grown on a printed graphene film are close to those obtained in the case of growth under the same conditions on CVD graphene. If the printed graphene layer contains residual organic additives, two-layer Bi2Se3/Bi2SeO2/G heterostructures with a conductivity of 0.3–0.9 kΩ/sq and the similar values of carrier mobility are formed at the same growth regime. Heterostructures of Bi2Se3/G and Bi2Se3/Bi2SeO2 are promising for the formation of conducting layers with high charge carrier mobility and transparent electrodes for the IR range, as well as for efficient conversion of solar energy and other electronic and optical applications.