Study of MIS Structures Based on CdHgTe and HfO2 Applied by PEALD | Sciact - CRIS-система Института катализа

Study of MIS Structures Based on CdHgTe and HfO2 Applied by PEALD Научная публикация

Журнал

Applied Physics Letters
ISSN: 0003-6951 , E-ISSN: 1077-3118

Вых. Данные

Год: 2022, Том: 121, Номер: 8, Номер статьи : 081602, Страниц : 5 DOI: 10.1063/5.0096133

Ключевые слова

Alumina; Atomic layer deposition; Cadmium telluride; Hafnium oxides; II-VI semiconductors; Interface states; Mercury amalgams; Mercury compounds; Metal insulator boundaries; MIS devices; Nitrogen plasma; Passivation; Semiconductor alloys; X ray photoelectron spectroscopy

Авторы

Gorshkov D.V. ¹ , Zakirov E.R. ¹ , Sidorov G.Yu. ¹ , Sabinina I.V. ¹ , Marin D.V. ¹ , Ikusov D.G. ¹ , Yakushev M.V. ¹ , Golyashov V.A. ¹ , Tereshchenko O.E. ¹

Организации

1	Rzhanov Institute of Semiconductor Physics SB RAS, Acad. Lavrentiev Ave., Novosibirsk 630090, Russia

We investigate the HfO2/Hg0.78Cd0.22Te interface fabricated by plasma-enhanced atomic layer deposition (PEALD) at 120°С During the deposition of HfO2, no donor-like defects are introduced into mercury cadmium telluride. X-ray photoelectron spectroscopy and ellipsometry were used to establish the optimal process regime at 120°С and to demonstrate how HfO2 layer composition and growth rate per cycle depend on post-plasma purge time; the optimum is achieved at 6 s. Increasing the post-plasma purge time decreases the carbon and nitrogen impurity concentration in the HfO2 layer. Measurements of the admittance of metal-insulator-semiconductor (MIS) structures over the surface of a sample show that the electro-physical properties are uniform. We discuss the method of measuring the admittance of MIS structures that allows us to minimize the contribution of slow states with trapped charge on shape and shift of the C–V curve. The results demonstrate that the densities of fixed charge, slow states, and fast interfacial traps at the HfO2/MCT interface are greater than that for Al2O3/MCT (also formed by PEALD). The interface trap density is estimated from a normalized parallel conductance map, and the HfO2 film adheres well.

Gorshkov D.V. , Zakirov E.R. , Sidorov G.Y. , Sabinina I.V. , Marin D.V. , Ikusov D.G. , Yakushev M.V. , Golyashov V.A. , Tereshchenko O.E.
Study of MIS Structures Based on CdHgTe and HfO2 Applied by PEALD
Applied Physics Letters. 2022. V.121. N8. 081602 :1-5. DOI: 10.1063/5.0096133 WOS Scopus CAPlusCA OpenAlex

Поступила в редакцию:	15 апр. 2022 г.
Принята к публикации:	4 авг. 2022 г.
Опубликована в печати:	23 авг. 2022 г.
Опубликована online:	23 авг. 2022 г.

Web of science:	WOS:000892460800006
Scopus:	2-s2.0-85137150966
Chemical Abstracts:	2022:2229584
Chemical Abstracts (print):	180:298109
OpenAlex:	W4292731286

БД	Цитирований
Scopus	1
OpenAlex	2
Web of science	1