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Shubnikov–de Haas Oscillations in p and n-type Topological Insulator (BixSb1−x)2Te3 Full article

Journal Journal of Physics Condensed Matter
ISSN: 0953-8984 , E-ISSN: 1361-648X
Output data Year: 2018, Volume: 30, Number: 26, Article number : 265001, Pages count : 8 DOI: 10.1088/1361-648x/aac59b
Tags topological insulator, Shubnikov–de Haas oscillation, (BixSb1−x)2Te3, Berry phase, electrical transport, quantum oscillation
Authors Akiyama Ryota 1 , Sumida Kazuki 2 , Ichinokura Satoru 1 , Nakanishi Ryosuke 1 , Kimura Akio 2 , Kokh Konstantin A 3,4,5 , Tereshchenko Oleg E 3,4,6 , Hasegawa Shuji 1
Affiliations
1 Department of Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
2 Graduate School of Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8526, Japan
3 Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090, Russia
4 Saint Petersburg State University, Saint Petersburg 198504, Russia
5 V.S. Sobolev Institute of Geology and Mineralogy, Novosibirsk 630090, Russia
6 A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russia

Abstract: We show Shubnikov–de Haas (SdH) oscillations in topological insulator (BixSb1−x)2Te3 flakes whose carrier types are p-type (x  =  0.29, 0.34) and n-type (x  =  0.42). The physical properties such as the Berry phase, carrier mobility, and scattering time significantly changed by tuning the Fermi-level position with the concentration x. The analyses of SdH oscillations by Landau-level fan diagram, Lifshitz–Kosevich theory, and Dingle-plot in the p-type samples with x  =  0.29 and 0.34 showed the Berry phase of zero and a relatively low mobility (2000–6000 cm2 V−1 s−1). This is due to the dominant bulk component in transport. On the other hand, the mobility in the n-type sample with x  =  0.42 reached a very large value ~17 000 cm2 V−1 s−1 and the Berry phase of near π, whereas the SdH oscillations were neither purely two- nor three-dimensional. These suggest that the transport channel has a surface-bulk coupling state which makes the carrier scattering lesser and enhances the mobility and has a character between two- and three-dimension.
Cite: Akiyama R. , Sumida K. , Ichinokura S. , Nakanishi R. , Kimura A. , Kokh K.A. , Tereshchenko O.E. , Hasegawa S.
Shubnikov–de Haas Oscillations in p and n-type Topological Insulator (BixSb1−x)2Te3
Journal of Physics Condensed Matter. 2018. V.30. N26. 265001 :1-8. DOI: 10.1088/1361-648x/aac59b WOS Scopus ANCAN PMID OpenAlex
Dates:
Submitted: Jan 31, 2018
Accepted: May 17, 2018
Published online: Jun 6, 2018
Published print: Jul 4, 2018
Identifiers:
Web of science: WOS:000434445900001
Scopus: 2-s2.0-85049032658
Chemical Abstracts: 2018:1824086
Chemical Abstracts (print): 171:279394
PMID: 29770777
OpenAlex: W3102347149
Citing:
DB Citing
Scopus 17
OpenAlex 13
Web of science 16
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