Electronic Structure of Silicon Oxynitride Films Grown by Plasma-Enhanced Chemical Vapor Deposition for Memristor Application | Sciact - CRIS-система Института катализа

Electronic Structure of Silicon Oxynitride Films Grown by Plasma-Enhanced Chemical Vapor Deposition for Memristor Application Научная публикация

Журнал

Journal of Non-Crystalline Solids
ISSN: 0022-3093 , E-ISSN: 1873-4812

Вых. Данные

Год: 2022, Том: 598, Номер статьи : 121925, Страниц : 8 DOI: 10.1016/j.jnoncrysol.2022.121925

Ключевые слова

Chemical vapor deposition; Electronic structure; FTIR; Memristors; Silicon oxynitride; XPS

Авторы

Perevalov T.V. ¹ , Volodin V.A. ^1,2 , Kamaev G.N. ¹ , Gismatulin A.A. ¹ , Cherkova S.G. ¹ , Prosvirin I.P. ³ , Astankova K.N. ¹ , Gritsenko V.A. ^1,4

Организации

1	Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev aven., Novosibirsk 630090, Russia
2	Novosibirsk State University, 2 Pirogov str., Novosibirsk 630090, Russia
3	Boreskov Institute of Catalysis SB RAS 5 Lavrentiev aven., Novosibirsk 630090, Russia
4	Novosibirsk State Technical University, 20K. Marx aven., Novosibirsk 630090, Russia

Информация о финансировании (2)

1	Российский научный фонд	22-19-00369
2	Министерство науки и высшего образования Российской Федерации (с 15 мая 2018)	075-12-2021-697

The electronic structure and optical properties of SiOxNy:H films enriched with silicon obtained by plasma-enhanced chemical deposition are studied. It is shown, that with the plasma generator power growth, the content of silicon (amorphous silicon clusters) and oxygen decreases, whereas the nitrogen content increases. Thus, the SiOxNy:H film composition can be effectively varied both by changing the gas flow ratio in the growth chamber and by changing the plasma generator power. The electronic stricture of SiOxNy of various x and y values is calculated from the first principles for the model structures, and the energy diagram, as well as the bandgap dependence on the oxygen content, is obtained. It is found that p+-Si/SiOxNy:H/Ni structures, have the properties of memristor bipolar type: they are reversibly switched between high and low resistance states. These memristors are forming-free: the initial state has a close resistance to the low resistance state. © 2022

Perevalov T.V. , Volodin V.A. , Kamaev G.N. , Gismatulin A.A. , Cherkova S.G. , Prosvirin I.P. , Astankova K.N. , Gritsenko V.A.
Electronic Structure of Silicon Oxynitride Films Grown by Plasma-Enhanced Chemical Vapor Deposition for Memristor Application
Journal of Non-Crystalline Solids. 2022. V.598. 121925 :1-8. DOI: 10.1016/j.jnoncrysol.2022.121925 WOS Scopus РИНЦ CAPlus OpenAlex

Поступила в редакцию:	15 июл. 2022 г.
Принята к публикации:	15 сент. 2022 г.
Опубликована online:	13 окт. 2022 г.
Опубликована в печати:	15 дек. 2022 г.

Web of science:	WOS:000875663000001
Scopus:	2-s2.0-85139596241
РИНЦ:	50504730
Chemical Abstracts:	2022:2642206
OpenAlex:	W4304961063

БД	Цитирований
Scopus	15
Web of science	14
РИНЦ	15
OpenAlex	16