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SiC Formation on the Carbon Nanotube Decorated with Silicon Nanoparticles Научная публикация

Журнал Diamond and Related Materials
ISSN: 0925-9635 , E-ISSN: 1879-0062
Вых. Данные Год: 2023, Том: 137, Номер статьи : 110113, Страниц : 13 DOI: 10.1016/j.diamond.2023.110113
Ключевые слова Silicon carbide (SiC); Multi-walled carbon nanotube; Composite; Avrami-Erofeev model; Electrical conductivity
Авторы Zavorin A.V. 1,2 , Kuznetsov V.L. 1 , Moseenkov S.I. 1 , Selyutin A.G. 3 , Ishchenko A.V. 1 , Tsendsuren Tsog-Ochir 2
Организации
1 Boreskov Institute of Catalysis SB RAS, Lavrentieva 5, Novosibirsk 630090, Russia
2 Novosibirsk State University, Pirogova 2, Novosibirsk 630090, Russia
3 Synchrotron radiation facility SKIF, Boreskov Institute of Catalysis SB RAS, 630559, Nikol'skiy Prospekt 1, Kol'tsovo, Russia

Информация о финансировании (1)

1 Министерство науки и высшего образования Российской Федерации (с 15 мая 2018) 0239-2021-0010

Реферат: Ex situ methods (TEM, XRD, and Raman spectroscopy) have been used to study the processes occurring at the multi-walled carbon nanotube/silicon interfaces (MWCNT/Si) during heat treatment of MWCNT-Si composites containing highly dispersed Si particles deposited on the surface of MWCNTs by CVD method. It has been established that during heat treatment, starting from 900 °C, the formation of SiC particles occurs. A further increase in temperature leads to the formation of polycrystalline SiC particles and a significant shortening of MWCNTs due to the reaction between Si particles and the surface of MWCNTs. It is shown that one can control the size of the formed SiC crystallites by varying the time and temperature of heat treatment. The kinetic dependences of the SiC formation process were studied within the Avrami-Erofeev model. The activation energy for the formation of SiC is estimated at 470 kJ/mol. The influence of heat treatment on the electrical conductivity and porosity of MWCNT-Si composites in the pressure range of 25–175 MPa has been studied.
Библиографическая ссылка: Zavorin A.V. , Kuznetsov V.L. , Moseenkov S.I. , Selyutin A.G. , Ishchenko A.V. , Tsendsuren T-O.
SiC Formation on the Carbon Nanotube Decorated with Silicon Nanoparticles
Diamond and Related Materials. 2023. V.137. 110113 :1-13. DOI: 10.1016/j.diamond.2023.110113 WOS Scopus РИНЦ CAPlus OpenAlex СКИФ ID
Даты:
Поступила в редакцию: 17 мар. 2023 г.
Принята к публикации: 7 июн. 2023 г.
Опубликована online: 8 июн. 2023 г.
Опубликована в печати: 1 авг. 2023 г.
Идентификаторы БД:
Web of science: WOS:001024441900001
Scopus: 2-s2.0-85163785228
РИНЦ: 54384092
Chemical Abstracts: 2023:1231795
OpenAlex: W4379876514
СКИФ ID: 2224
Цитирование в БД:
БД Цитирований
OpenAlex 3
Scopus 3
Web of science 2
РИНЦ 3
Альметрики: