Memory Properties and Short-Range Order in Silicon Oxynitride-Based Memristors Научная публикация
| Журнал |
Applied Physics Letters
ISSN: 0003-6951 , E-ISSN: 1077-3118 |
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| Вых. Данные | Год: 2023, Том: 122, Номер статьи : 232903, Страниц : 5 DOI: 10.1063/5.0151211 | ||||||
| Ключевые слова | Memristor, Current-voltage characteristic, Plasma processing, Resistive switching, X-ray photoelectron spectroscopy, Statistical mechanics models | ||||||
| Авторы |
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| Организации |
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Информация о финансировании (2)
| 1 | Министерство науки и высшего образования Российской Федерации (с 15 мая 2018) | 0242-2021-0003 |
| 2 | Российский научный фонд | 22-19-00369 |
Реферат:
Silicon oxynitride films of various compositions were grown by the plasma-enhanced chemical deposition method using a setup with remote plasma and an inductive excitation from a gas mixture of 10% monosilane (diluted with argon) and nitrogen in the presence of residual oxygen in working gas mixtures. The high-frequency generator power (13.56 MHz) was varied in the range of 50–150 W. The samples composition was studied using x-ray photoelectron spectroscopy. A comparison of the experimental Si 2p photoelectron spectrum with the calculation showed that, at a low generator power (50 W), the short-range order in silicon oxynitride films is better described by the “random mixture” model. As the generator power is increased (100 W and higher), the excess silicon content in a silicon oxynitride film is decreased, and the short-range order is better described by the “random bonding” model. On metal–insulator–semiconductor-structures based on the silicon oxynitride films obtained, measurements of current–voltage characteristics were carried out, and the resistive switching of the obtained structures is studied in the present contribution. It is found that, in films in which the short-range order is described by the random bonding model, a stable switching in the bipolar regime is observed.
Библиографическая ссылка:
Novikov Y.N.
, Kamaev G.N.
, Prosvirin I.P.
, Gritsenko V.A.
Memory Properties and Short-Range Order in Silicon Oxynitride-Based Memristors
Applied Physics Letters. 2023. V.122. 232903 :1-5. DOI: 10.1063/5.0151211 WOS Scopus РИНЦ CAPlus OpenAlex
Memory Properties and Short-Range Order in Silicon Oxynitride-Based Memristors
Applied Physics Letters. 2023. V.122. 232903 :1-5. DOI: 10.1063/5.0151211 WOS Scopus РИНЦ CAPlus OpenAlex
Даты:
| Поступила в редакцию: | 20 мар. 2023 г. |
| Принята к публикации: | 23 мая 2023 г. |
| Опубликована в печати: | 5 июн. 2023 г. |
| Опубликована online: | 5 июн. 2023 г. |
Идентификаторы БД:
| Web of science: | WOS:001000840800003 |
| Scopus: | 2-s2.0-85161724556 |
| РИНЦ: | 53989850 |
| Chemical Abstracts: | 2023:1155156 |
| OpenAlex: | W4379388952 |
Цитирование в БД:
Пока нет цитирований