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Vacuum Spin LED: First Step towards Vacuum Semiconductor Spintronics Научная публикация

Журнал

Nanomaterials
, E-ISSN: 2079-4991

Вых. Данные

Год: 2023, Том: 13, Номер: 3, Номер статьи : 422, Страниц : 12 DOI: 10.3390/nano13030422

Ключевые слова

electrons; spin; spintronics; quantum wells; spin LED; optical orientation; negative electron affinity

Авторы

Tereshchenko Oleg E. ^1,2 , Golyashov Vladimir A. ^1,2 , Rusetsky Vadim S. ^1,3 , Kustov Danil A. ¹ , Mironov Andrey V. ³ , Demin Alexander Yu. ³

Организации

1	Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia
2	Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Kol’tsovo 630559, Russia
3	CJSC “Ekran FEP”, Novosibirsk 630060, Russia

Improving the efficiency of spin generation, injection, and detection remains a key challenge for semiconductor spintronics. Electrical injection and optical orientation are two methods of creating spin polarization in semiconductors, which traditionally require specially tailored p-n junctions, tunnel or Schottky barriers. Alternatively, we introduce here a novel concept for spin-polarized electron emission/injection combining the optocoupler principle based on vacuum spin-polarized light-emitting diode (spin VLED) making it possible to measure the free electron beam polarization injected into the III-V heterostructure with quantum wells (QWs) based on the detection of polarized cathodoluminescence (CL). To study the spin-dependent emission/injection, we developed spin VLEDs, which consist of a compact proximity-focused vacuum tube with a spin-polarized electron source (p-GaAs(Cs,O) or Na2KSb) and the spin detector (III-V heterostructure), both activated to a negative electron affinity (NEA) state. The coupling between the photon helicity and the spin angular momentum of the electrons in the photoemission and injection/detection processes is realized without using either magnetic material or a magnetic field. Spin-current detection efficiency in spin VLED is found to be 27% at room temperature. The created vacuum spin LED paves the way for optical generation and spin manipulation in the developing vacuum semiconductor spintronics.

Tereshchenko O.E. , Golyashov V.A. , Rusetsky V.S. , Kustov D.A. , Mironov A.V. , Demin A.Y.
Vacuum Spin LED: First Step towards Vacuum Semiconductor Spintronics
Nanomaterials. 2023. V.13. N3. 422 :1-12. DOI: 10.3390/nano13030422 WOS Scopus CAPlusCA PMID OpenAlex СКИФ ID

Поступила в редакцию:	6 янв. 2023 г.
Принята к публикации:	14 янв. 2023 г.
Опубликована online:	19 янв. 2023 г.
Опубликована в печати:	1 февр. 2023 г.

Web of science:	WOS:000932926600001
Scopus:	2-s2.0-85147831599
Chemical Abstracts:	2023:341297
Chemical Abstracts (print):	182:69121
PMID (PubMed):	36770383
OpenAlex:	W4317622037
СКИФ ID:	1544

БД	Цитирований
OpenAlex	5
Web of science	5
Scopus	5