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Photoemission and Injection Properties of Combined Multialkali and III–V NEA Photodiodes: Spin-polarized Source and Spin-detector Научная публикация

Конференция 24th International Spin Symposium
22-22 окт. 2022 , Matsue
Сборник JPS Conference Proceedings
Сборник, 2023. ISBN 9784890271504.
Вых. Данные Год: 2022, Том: 37, Номер статьи : 021207, Страниц : 5 DOI: 10.7566/jpscp.37.021207
Ключевые слова spin-detector, spin-filter effect, GaAs, Na2KSb, NEA, spin-ARPES
Авторы Rusetsky Vadim S. 1,3 , Golyashov Vladimir A. 1,2 , Kustov Danil A. 3 , Mironov Andrey V. 3 , Demin Alexander Yu. 3 , Tereshchenko Oleg E. 1,2
Организации
1 Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation
2 Synchrotron radiation facility SKIF, Boreskov Institute of Catalysis SB RAS, 630559, Kol’tsovo, Russia
3 CJSC EKRAN-FEP, Novosibirsk, 630060, Russian Federation

Реферат: The spin-dependent photoemission and injection properties of III-V and multialkali semiconductor electrodes with effective negative electron affinity (NEA) are studied in the parallel-plate capacitor-like vacuum photodiode. The concept of an imaging-type 3D spin detector, based on the electron–photon conversion effect in a semiconductor heterostructure, is demonstrated. This novel multichannel concept is based on the idea of direct transfer of 2D spin-polarized electron distribution to cathodoluminescence (CL) image. The detector is a semiconductor structure allowing to measure the spatial and polarization-dependent CL intensity from injected spin-polarized free electrons
Библиографическая ссылка: Rusetsky V.S. , Golyashov V.A. , Kustov D.A. , Mironov A.V. , Demin A.Y. , Tereshchenko O.E.
Photoemission and Injection Properties of Combined Multialkali and III–V NEA Photodiodes: Spin-polarized Source and Spin-detector
В сборнике JPS Conference Proceedings. 2022. – Т.37. – ISBN 9784890271504. DOI: 10.7566/jpscp.37.021207 OpenAlex
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Поступила в редакцию: 9 мар. 2022 г.
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