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Effect of Plasma Power on Growth Process, Chemical Structure, and Properties of PECVD Films Produced from Hexamethyldisilane and Ammonia Научная публикация

Журнал Surface and Coatings Technology
ISSN: 0257-8972 , E-ISSN: 1879-3347
Вых. Данные Год: 2024, Том: 490, Номер статьи : 131131, Страниц : 12 DOI: 10.1016/j.surfcoat.2024.131131
Ключевые слова Silicon; Cu diffusion barrier; Thin film; Porosity; SiCN
Авторы Ermakova Evgeniya 1 , Shayapov Vladimir 1 , Saraev Andrey 2 , Maximovsky Eugene 1 , Kirienko Viktor 3 , Khomyakov Maksim 4 , Sulyaeva Veronica 1 , Kolodin Aleksey 5 , Gerasimov Evgeny 2 , Kosinova Marina 1
Организации
1 Department of functional materials, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090, Russia
2 National center of investigation of catalysts, Boreskov Institute of Catalysis SB RAS, Novosibirsk 630090, Russia
3 Laboratory of Nonequilibrium Semiconductor Systems, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090, Russia
4 Department of Laser Plasma, Institute of Laser Physics SB RAS, Novosibirsk 630090, Russia
5 Department of Chemistry of Coordination, Cluster and Supramolecular Compounds, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090, Russia

Информация о финансировании (1)

1 Российский научный фонд 23-79-00026 (123041400012-0)

Реферат: Silicon carbonitride films were grown by plasma enhanced chemical vapor deposition (PECVD) using hexamethyldisilane (HMDS) and ammonia initial gas mixture at deposition temperature of 300 °C. The elemental composition, growth rate, hardness, dielectric constant, and refractive index values of the SiCN:H thin films were analyzed as function of plasma power ranging from 10 to 80 W. In-situ analysis of gas phase performed by optical emission spectroscopy (OES) revealed the presence of H2, H, CH, and CN particles. Concentration trends of H and CH particles under plasma power variation were determined using an actinometry technique. Fourier-transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray analysis (EDX) confirmed the effective incorporation of nitrogen at the level of 20 at.% through formation of Sisingle bondN, Nsingle bondH, and Csingle bondN bonds. The ratios of Si/C and Si/N, and surrounding of Si, C, and N atoms analyzed by XPS did not change with rise of plasma power, while the hydrogen content in films, mainly involved in CHx fragments, decreased. The films with hardness of 5.0–8.1 GPa, refractive index of 1.64–1.76, and dielectric constant of 4.1–5.1 were synthesized by varying the experimental conditions. The ellipsometric porosimetry (EP) shows the absence of a porous structure. Analysis of annealed Cu/SiCN:H/Si(100) structure by transmission electron microscopy (TEM) showed clear interfaces of SiCN:H with both the Cu layer and the Si(100) substrate. No noticeable diffusion of copper through dielectric layer was detected. The aging of films during storage under environmental conditions was studied. It was shown that the most stable film was obtained using 80 W plasma power, and had a composition of Si0.3C0.5N0.2:H.
Библиографическая ссылка: Ermakova E. , Shayapov V. , Saraev A. , Maximovsky E. , Kirienko V. , Khomyakov M. , Sulyaeva V. , Kolodin A. , Gerasimov E. , Kosinova M.
Effect of Plasma Power on Growth Process, Chemical Structure, and Properties of PECVD Films Produced from Hexamethyldisilane and Ammonia
Surface and Coatings Technology. 2024. V.490. 131131 :1-12. DOI: 10.1016/j.surfcoat.2024.131131 WOS Scopus РИНЦ OpenAlex
Даты:
Поступила в редакцию: 5 мар. 2024 г.
Принята к публикации: 12 июл. 2024 г.
Опубликована online: 14 июл. 2024 г.
Опубликована в печати: 30 авг. 2024 г.
Идентификаторы БД:
Web of science: WOS:001283571800001
Scopus: 2-s2.0-85199422782
РИНЦ: 68376658
OpenAlex: W4400616981
Цитирование в БД: Пока нет цитирований
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