Na2KSb/CsxSb Interface Engineering for High-Efficiency Photocathodes Научная публикация
Журнал |
Physical Review Applied (PRApplied)
ISSN: 2331-7043 , E-ISSN: 2331-7019 |
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Вых. Данные | Год: 2024, Том: 22, Номер: 2, Номер статьи : 024008, Страниц : DOI: 10.1103/physrevapplied.22.024008 | ||||||||
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Организации |
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Информация о финансировании (2)
1 | Министерство науки и высшего образования Российской Федерации (с 15 мая 2018) | FWUR-2024-0042 |
2 | Российский научный фонд | 22-12-20024 (122063000001-1) |
Реферат:
Optical and photoemission measurements were performed on alkali antimonide Na2KSb and Na2KSb/Cs Sb photocathodes in order to determine their energy-band diagrams, elucidate the photoemission pathways, and explore the options for interface engineering in order to reach high quantum efficiencies of the photocathodes. This study is motivated by the recent discovery of optical orientation in Na2KSb and emission of spin-polarized electrons from Na2KSb/Cs Sb photocathodes [V.S. Rusetsky et al., Phys. Rev. Lett. 129, 166802 (2022)]. We have shown that the band gap of Na2KSb at =295 K lies within the range of 1.40–1.44 eV. The Na2KSb surface activation by the deposition of Cs and Sb results in effective electron affinity decrease by approximately 0.37 eV, and in an increase of the quantum efficiency up to 0.2 electrons per incident photon. The analysis of longitudinal energy distribution curves (EDCs) proves that the surface of activated Na2KSb/Cs Sb photocathodes have negative effective electron affinity of approximately −0.1 and −0.25 eV at =295 and 80 K, respectively. EDC measurements under increasing photon energy ℏ demonstrate the transition of photoemission pathway from the surface states’ photoionization at ℏ < to the emission from the conduction-band bottom at ℏ ≈ and from the states with high kinetic energy in the conduction band at ℏ > . EDCs measured at 80 K reveal a highly directional photoelectron emission from the Na2KSb/Cs Sb photocathode, as compared to the p-GaAs(Cs,O) photocathode. This fact, along with the observed significant, by an order of magnitude, increase in the photoluminescence intensity under the Na2KSb surface activation by Cs and Sb, indicates relatively weak diffuse scattering in the “quasiepitaxial” Cs Sb activation layer of a Na2KSb/Cs Sb photocathode, compared to strong scattering in the amorphous (Cs,O) activation layer of a p-GaAs(Cs,O) photocathode
Библиографическая ссылка:
Rozhkov S.A.
, Bakin V.V.
, Rusetsky V.S.
, Kustov D.A.
, Golyashov V.A.
, Demin A.Y.
, Scheibler H.E.
, Alperovich V.L.
, Tereshchenko O.E.
Na2KSb/CsxSb Interface Engineering for High-Efficiency Photocathodes
Physical Review Applied (PRApplied). 2024. V.22. N2. 024008 . DOI: 10.1103/physrevapplied.22.024008 WOS Scopus РИНЦ OpenAlex
Na2KSb/CsxSb Interface Engineering for High-Efficiency Photocathodes
Physical Review Applied (PRApplied). 2024. V.22. N2. 024008 . DOI: 10.1103/physrevapplied.22.024008 WOS Scopus РИНЦ OpenAlex
Даты:
Поступила в редакцию: | 9 апр. 2024 г. |
Принята к публикации: | 25 июн. 2024 г. |
Опубликована в печати: | 1 авг. 2024 г. |
Опубликована online: | 1 авг. 2024 г. |
Идентификаторы БД:
Web of science: | WOS:001285376300001 |
Scopus: | 2-s2.0-85200767412 |
РИНЦ: | 73363278 |
OpenAlex: | W4401251748 |
Цитирование в БД:
Пока нет цитирований