MOCVD Growth and Study of Magnetic Co Films Full article
Journal |
Surface Engineering
ISSN: 0267-0844 , E-ISSN: 1743-2944 |
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Output data | Year: 2016, Volume: 32, Number: 1, Pages: 8-14 Pages count : 7 DOI: 10.1179/1743294414Y.0000000424 | ||||||||||
Tags | Co films, Co precursor, Magnetic characteristics, MOCVD, Vapour pressure | ||||||||||
Authors |
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Affiliations |
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Funding (1)
1 | The Ministry of Education and Science of the Russian Federation | 14.604.21.0080 |
Abstract:
The Co(N’acN’ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal–organic chemical vapour deposition. This chelate exhibits good volatility ln (P/P°) = 26·45–14006·7/T(K) at moderate temperature values (382–427 K). Co films were grown on Si (100) substrates and studied by X-ray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.
Cite:
Dorovskikh S.I.
, Hairullin R.R.
, Sysoev S.V.
, Kriventsov V.V.
, Panin A.V.
, Shubin Y.V.
, Morozova N.B.
, Gelfond N.V.
, Korenev S.V.
MOCVD Growth and Study of Magnetic Co Films
Surface Engineering. 2016. V.32. N1. P.8-14. DOI: 10.1179/1743294414Y.0000000424 WOS Scopus РИНЦ AN OpenAlex
MOCVD Growth and Study of Magnetic Co Films
Surface Engineering. 2016. V.32. N1. P.8-14. DOI: 10.1179/1743294414Y.0000000424 WOS Scopus РИНЦ AN OpenAlex
Dates:
Submitted: | Aug 14, 2014 |
Accepted: | Nov 13, 2014 |
Published online: | Nov 27, 2014 |
Published print: | Jan 2, 2016 |
Identifiers:
Web of science: | WOS:000369429900002 |
Scopus: | 2-s2.0-84959360718 |
Elibrary: | 26972024 |
Chemical Abstracts: | 2016:166647 |
OpenAlex: | W2007808179 |