Charge Transport Mechanism in [GeOx](z)[SiO2](1-z) Based MIS Structures | Sciact - CRIS-система Института катализа

Charge Transport Mechanism in [GeOx](z)[SiO2](1-z) Based MIS Structures Научная публикация

Журнал

Applied Physics Letters
ISSN: 0003-6951 , E-ISSN: 1077-3118

Вых. Данные

Год: 2024, Том: 125, Номер: 24, Номер статьи : 242901, Страниц : 8 DOI: 10.1063/5.0240239

Авторы

Yushkov I.D. ^1,2 , Gismatulin A.A. ¹ , Prosvirin I.P. ³ , Kamaev G.N. ^1,2 , Marin D.V. ² , Vergnat M. ⁴ , Volodin V.A. ^1,2

Организации

1	Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences 1 , Lavrent'ev ave., 13, Novosibirsk 630090,
2	Novosibirsk State University 2 , Pirogova street, 2, Novosobirsk 630090,
3	Boreskov Institute of Catalysis SB RAS 3 , 5 Lavrentiev ave., Novosibirsk 630090,
4	Université de Lorraine, CNRS, IJL 4 , F-54000 Nancy,

Информация о финансировании (2)

1	Российский научный фонд	22-19-00369
2	Министерство науки и высшего образования Российской Федерации (с 15 мая 2018)	FSUS-2024-0020

The mechanisms of conductivity in metal–insulator–semiconductor (MIS) structures based on [GeO x ](z) [SiO 2 ](1-z) films (0.25 z 1) fabricated by co-evaporation of germanium oxide and silicon oxide powders in vacuum and deposition on a pþ-type silicon substrate are studied. Indium tin oxide deposited by magnetron method is used as the top electrode. According to IR spectroscopy, Ge–O, Si–O, and Ge–O–Si bonds are detected in the films, while no features related to the presence of germanium clusters are found in the Raman spectra. The current–voltage characteristics (I–V curves) are measured at different temperatures and analyzed by applying the eight most common models of charge transport in MIS structures. It is found that the experimental I–V curves are most accurately approximated in the space charge limited current model, and the parameters of the charge traps are determined within this model

Yushkov I.D. , Gismatulin A.A. , Prosvirin I.P. , Kamaev G.N. , Marin D.V. , Vergnat M. , Volodin V.A.
Charge Transport Mechanism in [GeOx](z)[SiO2](1-z) Based MIS Structures
Applied Physics Letters. 2024. V.125. N24. 242901 :1-8. DOI: 10.1063/5.0240239 WOS Scopus OpenAlex

Поступила в редакцию:	25 сент. 2024 г.
Принята к публикации:	23 нояб. 2024 г.
Опубликована в печати:	9 дек. 2024 г.
Опубликована online:	9 дек. 2024 г.

Web of science:	WOS:001378199200008
Scopus:	2-s2.0-85212412190
OpenAlex:	W4405185890

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