Short-Range Order and Memory Properties of Silicon Oxide–Based Memristors | Sciact - CRIS-система Института катализа

Short-Range Order and Memory Properties of Silicon Oxide–Based Memristors Научная публикация

Журнал

Applied Surface Science
ISSN: 0169-4332

Вых. Данные

Год: 2025, Том: 687, Номер статьи : 162305, Страниц : DOI: 10.1016/j.apsusc.2025.162305

Ключевые слова

Memristor; Resistive switching; Short-range order; Silicon oxide; X-ray photoelectron spectroscopy

Авторы

Kamaev G.N. ¹ , Novikov Yu.N. ¹ , Prosvirin I.P. ² , Gismatulin A.A. ¹ , Khanas A.R. ³ , Zenkevich A.V. ³ , Gritsenko V.A. ^1,4

Организации

1	Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russia
2	Boreskov Institute of Catalysis SB RAS, 5 Lavrentiev aven., Novosibirsk 630090, Russia
3	Moscow Institute of Physics and Technology, Moscow Region, Dolgoprudny 141701, Russia
4	Novosibirsk State Technical University, 20 Marx Aven, Novosibirsk 630073, Russia

Информация о финансировании (2)

1	Министерство науки и высшего образования Российской Федерации (с 15 мая 2018)	FWGW-2021-0003 (121052600081-2)(0242-2021-0003)
2	Министерство науки и высшего образования Российской Федерации (с 15 мая 2018)	FWGW-2022-0011 (122041400256-9)

The relation between the structure of amorphous SiOx films of various compositions obtained by plasma-enhanced chemical vapor deposition and the characteristics of Resistive Random-Access Memory (ReRAM) devices with the active layer based on such films were investigated. The composition of the samples was studied using X-ray photoelectron spectroscopy. A comparison of the experimental Si 2p photoelectron spectrum with calculations showed that the short-range order in the arrangement of atoms in the amorphous SiOx films is defined by the content of excess silicon and can be described within the framework of different structural models. The short-range order has a decisive influence on the memristor characteristics of obtained films. Memristors based on SiOx whose active layer obeys the Random Bonding model exhibit a more pronounced hysteresis window and high stability of the resistive switching of ReRAM devices between two stable (low- and high-resistive) states.

Kamaev G.N. , Novikov Y.N. , Prosvirin I.P. , Gismatulin A.A. , Khanas A.R. , Zenkevich A.V. , Gritsenko V.A.
Short-Range Order and Memory Properties of Silicon Oxide–Based Memristors
Applied Surface Science. 2025. V.687. 162305 . DOI: 10.1016/j.apsusc.2025.162305 WOS Scopus РИНЦ OpenAlex

Поступила в редакцию:	16 сент. 2024 г.
Принята к публикации:	2 янв. 2025 г.
Опубликована online:	3 янв. 2025 г.
Опубликована в печати:	1 апр. 2025 г.

Web of science:	WOS:001410226500001
Scopus:	2-s2.0-85214083747
РИНЦ:	79508273
OpenAlex:	W4406061997

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