Growth and Characterization of Mixed Oxide Hf1−xScxOy (0 ≤ x ≤ 1) Films Prepared by the Atomic Layer Deposition Method | Sciact - CRIS-система Института катализа

Growth and Characterization of Mixed Oxide Hf1−xScxOy (0 ≤ x ≤ 1) Films Prepared by the Atomic Layer Deposition Method Научная публикация

Журнал

Journal of Electronic Materials
ISSN: 0361-5235

Вых. Данные

Год: 2025, Том: 54, Страницы: 4832–4845 Страниц : 14 DOI: 10.1007/s11664-025-11865-z

Ключевые слова

Complex oxide film; ALD deposition; XRD; XPS; ellipsometry; band structure

Авторы

Atuchin V.V. ^1,2 , Lebedev M.S. ^3,4 , Gromilov S.A. ⁵ , Korolkov I.V. ⁵ , Perevalov T.V. ⁶ , Prosvirin I.P. ⁷

Организации

1	Research and Development Department, Kemerovo State University, Kemerovo, Russia 650000
2	Laboratory of Optical Materials and Structures, Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia 630090
3	Laboratory of Metalorganic Compounds for Dielectric Material Deposition, Nikolaev Institute of Inorganic Chemistry, Novosibirsk, Russia 630090
4	Laboratory of Functional Films and Coatings, Nikolaev Institute of Inorganic Chemistry, Novosibirsk, Russia 630090
5	Laboratory of Crystal Chemistry, Nikolaev Institute of Inorganic Chemistry, Novosibirsk, Russia 630090
6	Laboratory of Silicon Material Science, Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia 630090
7	Surface Science Laboratory, Boreskov Institute of Catalysis, Novosibirsk, Russia 630090

Информация о финансировании (2)

1	Министерство науки и высшего образования Российской Федерации (с 15 мая 2018)	FWUZ-2025-0004 (125021001790-0)(075-03-2025-190)
2	Министерство науки и высшего образования Российской Федерации (с 15 мая 2018)	FWUZ-2025-0003 (125021302132-4)(075-03-2025-190)

Optical-quality Hf1−xScxOy (0 ≤ x ≤ 1) films were deposited on Si(100) substrates by the atomic layer deposition (ALD) method using tetrakis(ethylmethylamido)hafnium(IV) [Hf(NC2H5CH3)4, TEMAH] and tris(methylcyclopentadienyl)scandium(III) [Sc(C5H4CH3)3, Sc(MeCp)3] as metal precursors. H2O vapor was applied as an oxygen source. The specific growth kinetics were observed for 0 < x < 1. The structural properties of the as-deposited films were evaluated by x-ray diffraction (XRD) analysis, and low-temperature crystallization during ALD deposition was observed. The chemical composition of the deposited films was determined by x-ray photoelectron spectroscopy, including chemical bonding analysis. For comparison, the band structure was calculated by density functional theory (DFT) methods for selected film compositions. The dispersive optical constants were obtained by spectroscopic ellipsometry over the photon energy range of 1.12–4.96 eV. The wide-range tuning of optical constants was reached in the Hf1−xScxOy (0 ≤ x ≤ 1) films by varying the chemical composition. Thus, it was shown that Hf1−xScxOy (0 ≤ x ≤ 1) films can be successfully grown by ALD, and they are promising for use in optoelectronic structures.

Atuchin V.V. , Lebedev M.S. , Gromilov S.A. , Korolkov I.V. , Perevalov T.V. , Prosvirin I.P.
Growth and Characterization of Mixed Oxide Hf1−xScxOy (0 ≤ x ≤ 1) Films Prepared by the Atomic Layer Deposition Method
Journal of Electronic Materials. 2025. V.54. P.4832–4845. DOI: 10.1007/s11664-025-11865-z WOS Scopus РИНЦ OpenAlex

Поступила в редакцию:	12 июн. 2024 г.
Принята к публикации:	20 февр. 2025 г.
Опубликована online:	12 мар. 2025 г.
Опубликована в печати:	1 июн. 2025 г.

Web of science:	WOS:001443002500001
Scopus:	2-s2.0-105000044793
РИНЦ:	80479392
OpenAlex:	W4408362915

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