Hot-Pressed Silicon Carbide Resistance to ITER-Relevant Thermal Shock | Sciact - CRIS-система Института катализа

Hot-Pressed Silicon Carbide Resistance to ITER-Relevant Thermal Shock Научная публикация

Журнал

Plasma science and technology
ISSN: 1009-0630

Вых. Данные

Год: 2025, Том: 27, Номер: 12, Номер статьи : 125601, Страниц : 12 DOI: 10.1088/2058-6272/ae117b

Ключевые слова

silicon carbide, plasma-facing components, laser heating, high-temperature ceramics, in situ diagnostics, thermal shock

Авторы

Cherepanov Dmitrii ^1,2 , Golosov Mikhail ² , Vyacheslavov Leonid ¹ , Baklanova Natalia ² , Ryzhkov Georgii ¹ , Popov Vladimir ^1,3 , Shoshin Andrey ^1,3,4 , Kazantsev Sergey ^1,2,5 , Kasatov Alexandr ^1,3 , Kandaurov Igor ¹ , Burdakov Alexandr ^1,4

Организации

1	Budker Institute of Nuclear Physics SB RAS, Novosibirsk 630090, Russia
2	Institute of Solid State Chemistry and Mechanochemistry SB RAS, Novosibirsk 630090, Russia
3	Novosibirsk State University, Novosibirsk 630090, Russia
4	Novosibirsk State Technical University, Novosibirsk 630073, Russia
5	SKIF Synchrotron Radiation Facility, Boreskov Institute of Catalysis SB RAS, Koltsovo 630559, Russia

Studies were carried out on the thermally induced erosion of silicon carbide as a result of pulsed infrared laser heating, simulating transient heat loads expected in the ITER tokamak divertor zone (laser pulse duration: ~0.5 ms). The critical parameters of pulsed heating that the material can withstand before the onset of erosion with loss of substance were determined. The experimentally observed damage threshold of hot-pressed silicon carbide under thermal shock of submillisecond duration corresponds to a temperature of about 1320±80 K, while a heat flux factor is about 23.9± 1.6 MJ·m−2·s−0.5 (the sample was initially at room temperature). This result is relevant for surfaces with low roughness ( Ra≈1.1 µm, Rz ≈5.3µm). An increase in surface roughness leads to a decrease in the resistance of ceramics to pulsed heating. For rough surface ( Ra≈1.7 µm, Rz ≈9.3µm) critical temperature of about 790±50 K and heat flux factor of about 11.6±0.8 MJ·m−2·s−0.5 were obtained. Thus, silicon carbide exhibits excellent resistance to transient heat loads as promising plasma-facing material, especially in the case of reduced surface roughness.

Cherepanov D. , Golosov M. , Vyacheslavov L. , Baklanova N. , Ryzhkov G. , Popov V. , Shoshin A. , Kazantsev S. , Kasatov A. , Kandaurov I. , Burdakov A.
Hot-Pressed Silicon Carbide Resistance to ITER-Relevant Thermal Shock
Plasma science and technology. 2025. V.27. N12. 125601 :1-12. DOI: 10.1088/2058-6272/ae117b WOS РИНЦ OpenAlex СКИФ ID

Поступила в редакцию:	23 мая 2025 г.
Принята к публикации:	9 окт. 2025 г.
Опубликована online:	10 дек. 2025 г.

Web of science:	WOS:001635042200001
РИНЦ:	87495662
OpenAlex:	W4415005037
СКИФ ID:	4251

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