Enhanced Reflectance X-Ray Absorption Fine Structure Sensitivity Using a Whispering-Gallery Waveguide Full article
Conference |
XII National Synchrotron Radiation Conference 13-18 Jul 1998 , Новосибирск |
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Journal |
Nuclear Instruments and Methods in Physics Research Section A
ISSN: 0168-9002 |
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Output data | Year: 2000, Volume: 448, Number: 1-2, Pages: 173-178 Pages count : 6 DOI: 10.1016/S0168-9002(00)00216-3 | ||||||||||
Tags | Light absorption; Mirrors; Molecules; Monolayers; Ray tracing; Reflection; Semiconducting germanium compounds; Silicon wafers; Ultrathin films; Waveguides; X rays | ||||||||||
Authors |
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Affiliations |
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Funding (1)
1 | Russian Foundation for Basic Research | 97-02-18454 |
Abstract:
A new technique of reflectance X-ray absorption fine structure (REFL-XAFS) utilizing waveguides where X-rays are reflected many times along the waveguide surface is discussed. The multiple total reflection (MTR) phenomenon highly increases X-ray interaction with the waveguide surface and hence offers higher sensitivity compared to conventional (single reflection) REFL-XAFS. On the one hand, this technique is a direct structural method for characterizing waveguides (e.g. capillaries) where the application of other methods is very difficult. On the other hand, the conventional thin wafer can be transformed to a whispering-gallery (WG) waveguide by bending to a curved mirror. Ray tracing calculations demonstrate that the WG waveguide is very suitable for REFL-XAFS measurements. This method was experimentally realized for a cylindrically bent silica wafer with the surface covered with a GeO2 monolayer. The Ge K-edge REFL-XAFS measurements were performed using both MTR and conventional techniques. The MTR technique allows us to achieve about 20-fold gain in the signal-to-background ratio compared with the conventional technique. The MTR phenomenon discussed in this paper can provide new possibilities to study clean surfaces, ultrathin films and adsorbed molecules.
Cite:
Chernov V.A.
, Kim S.K.
, Kovalenko N.V.
, Zolotarev K.V.
Enhanced Reflectance X-Ray Absorption Fine Structure Sensitivity Using a Whispering-Gallery Waveguide
Nuclear Instruments and Methods in Physics Research Section A. 2000. V.448. N1-2. P.173-178. DOI: 10.1016/S0168-9002(00)00216-3 WOS Scopus РИНЦ ANCAN OpenAlex
Enhanced Reflectance X-Ray Absorption Fine Structure Sensitivity Using a Whispering-Gallery Waveguide
Nuclear Instruments and Methods in Physics Research Section A. 2000. V.448. N1-2. P.173-178. DOI: 10.1016/S0168-9002(00)00216-3 WOS Scopus РИНЦ ANCAN OpenAlex
Dates:
Published print: | Jun 21, 2000 |
Published online: | Jun 22, 2000 |
Identifiers:
Web of science: | WOS:000088282500037 |
Scopus: | 2-s2.0-0034205490 |
Elibrary: | 13345358 |
Chemical Abstracts: | 2000:434611 |
Chemical Abstracts (print): | 133:184996 |
OpenAlex: | W2066601862 |