Ferromagnetic HfO2/Si/GaAs Interface for Spin-Polarimetry Applications | Sciact - CRIS-система Института катализа

Ferromagnetic HfO2/Si/GaAs Interface for Spin-Polarimetry Applications Научная публикация

Журнал

Applied Physics Letters
ISSN: 0003-6951 , E-ISSN: 1077-3118

Вых. Данные

Год: 2015, Том: 107, Номер статьи : 123506, Страниц : 5 DOI: 10.1063/1.4931944

Ключевые слова

Charge coupled devices; Dielectric devices; Ferromagnetic materials; Ferromagnetism; Gallium arsenide; Gate dielectrics; Hafnium oxides; High-k dielectric; III-V semiconductors; Metals; Molecular beam epitaxy; MOS devices; Oxide semiconductors; Semiconducting gallium; Semiconducting gallium arsenide; Semiconducting silicon; Silicon on insulator technology; Ultrathin films

Авторы

Tereshchenko O.E. ^1,2 , Golyashov V.A. ^1,2 , Eremeev S.V. ^3,4 , Maurin I. ⁵ , Bakulin A.V. ³ , Kulkova S.E. ^3,4 , Aksenov M.S. ¹ , Preobrazhenskii V.V. ¹ , Putyato M.A. ¹ , Semyagin B.R. ¹ , Dmitriev D.V. ¹ , Toropov A.I. ¹ , Gutakovskii A.K. ^1,2 , Khandarkhaeva S.E. ² , Prosvirin I.P. ^2,6 , Kalinkin A.V. ⁶ , Bukhtiyarov V.I. ^2,6 , Latyshev A.V. ^1,2

Организации

1	Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russian Federation
2	Novosibirsk State University, Novosibirsk 630090, Russian Federation
3	Institute of Strength Physics and Materials Science, 634021 Tomsk, Russian Federation
4	Tomsk State University, 634050 Tomsk, Russian Federation
5	Laboratoire de Physique de la Matie`re Condensee, Ecole Polytechnique - CNRS, 91128 Palaiseau Cedex, France
6	Boreskov Institute of Catalysis, Novosibirsk 630090, Russian Federation

Информация о финансировании (2)

1	Министерство образования и науки Российской Федерации	14.621.21.0004 (RFMEFI62114X0004)
2	Национальный исследовательский Томский государственный университет	8.1.05.2015

In this letter, we present electrical and magnetic characteristics of HfO2-based metal-oxide-semiconductor capacitors (MOSCAPs), along with the effect of pseudomorphic Si as a passivating interlayer on GaAs(001) grown by molecular beam epitaxy. Ultrathin HfO2 high-k gate dielectric films (3–15 nm) have been grown on Si/GaAs(001) structures through evaporation of a Hf/HfO2 target in NO2 gas. The lowest interface states density Dit at Au/HfO2/Si/GaAs(001) MOS-structures were obtained in the range of (6−13)×1011 eV−1 cm−2 after annealing in the 400–500 °C temperature range as a result of HfO2 crystallization and the Si layer preservation in non-oxidized state on GaAs. HfO2-based MOSCAPs demonstrated the ferromagnetic properties which were attributed to the presence of both cation and anion vacancies according to the first-principle calculations. Room-temperature ferromagnetism in HfO2 films allowed us to propose a structure for the ferromagnetic MOS spin-detector.

Tereshchenko O.E. , Golyashov V.A. , Eremeev S.V. , Maurin I. , Bakulin A.V. , Kulkova S.E. , Aksenov M.S. , Preobrazhenskii V.V. , Putyato M.A. , Semyagin B.R. , Dmitriev D.V. , Toropov A.I. , Gutakovskii A.K. , Khandarkhaeva S.E. , Prosvirin I.P. , Kalinkin A.V. , Bukhtiyarov V.I. , Latyshev A.V.
Ferromagnetic HfO2/Si/GaAs Interface for Spin-Polarimetry Applications
Applied Physics Letters. 2015. V.107. 123506 :1-5. DOI: 10.1063/1.4931944 WOS Scopus РИНЦ CAPlusCA OpenAlex

Поступила в редакцию:	16 июл. 2015 г.
Принята к публикации:	17 сент. 2015 г.
Опубликована в печати:	21 сент. 2015 г.
Опубликована online:	24 сент. 2015 г.

Web of science:	WOS:000361832600070
Scopus:	2-s2.0-84942540424
РИНЦ:	24953061
Chemical Abstracts:	2015:1557669
Chemical Abstracts (print):	163:530122
OpenAlex:	W2117769619

БД	Цитирований
Web of science	7
Scopus	7
РИНЦ	5
OpenAlex	7