Crystal Growth of Bi2Te3 and Noble Cleaved (0001) Surface Properties | Sciact - CRIS-система Института катализа

Crystal Growth of Bi2Te3 and Noble Cleaved (0001) Surface Properties Научная публикация

Журнал

Journal of Solid State Chemistry
ISSN: 0022-4596 , E-ISSN: 1095-726X

Вых. Данные

Год: 2016, Том: 236, Страницы: 203-208 Страниц : 6 DOI: 10.1016/j.jssc.2015.07.031

Ключевые слова

AFM, Bi2Se3, Bridgman technique, Cleavage, RHEED, SE, STM, XPS, XRD

Авторы

Atuchin V.V. ^1,2 , Golyashov V.A. ^3,4 , Kokh K.A. ^5,6,7 , Korolkov I.V. ^4,8 , Kozhukhov A.S. ^4,9 , Kruchinin V.N. ¹⁰ , Loshkarev I.D. ¹¹ , Pokrovsky L.D. ¹ , Prosvirin I.P. ^4,12 , Romanyuk K.N. ^13,14 , Tereshchenko O.E. ^3,4,7

Организации

1	Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
2	Functional Electronics Laboratory, Tomsk State University, Tomsk 634050, Russia
3	Laboratory of Molecular Beam Epitaxy of III-V Semiconductors, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
4	Novosibirsk State University, Novosibirsk 630090, Russia
5	Laboratory of Crystal Growth, Institute of Geology and Mineralogy, SB RAS, Novosibirsk 630090, Russia
6	Laboratory of Nanostructured Surfaces, Tomsk State University, Tomsk 634050, Russia
7	Spintronics Laboratory, Saint Petersburg State University, Saint Petersburg 198504, Russia
8	Laboratory of Crystal Chemistry, Nikolaev Institute of Inorganic Chemistry, SB RAS, Novosibirsk 630090, Russia
9	Laboratory of Nanodiagnostics and Nanolithography, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
10	Laboratory for Ellipsometry of Semiconductor Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
11	Laboratory of Molecular Beam Epitaxy of Elementary Semiconductors and A3B5 Compounds, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
12	Boreskov Institute of Catalysis, SB RAS, Novosibirsk 630090, Russia
13	Department of Materials and Ceramic Engineering & CICECO, University of Aveiro, 3810-193 Aveiro, Portugal
14	Institute of Natural Sciences, Ural Federal University, Ekaterinburg 620083, Russia

Информация о финансировании (7)

1	Министерство образования и науки Российской Федерации	14.621.21.0004 (RFMEFI62114X0004)
2	Российский научный фонд	14-22-00143
3	Российский фонд фундаментальных исследований	13-02-00706
4	Министерство образования и науки Российской Федерации
5	Российский фонд фундаментальных исследований	14-08-31110
6	Национальный исследовательский Томский государственный университет	8.2.06.2015
7	Санкт-Петербургский государственный университет	11.50.202.2015

A high quality Bi2Te3 crystal has been grown by Bridgman method with the use of rotating heat field. The phase purity and bulk structural quality of the crystal have been verified by XRD analysis and rocking curve observation. The atomically smooth Bi2Te3(0001) surface with an excellent crystallographic quality is formed by cleavage in the air. The chemical and microstructural properties of the surface have been evaluated with RHEED, AFM, STM, SE and XPS. The Bi2Te3(0001) cleaved surface is formed by atomically smooth terraces with the height of the elemental step of ~1.04±0.1 nm, as estimated by AFM. There is no surface oxidation process detected over a month keeping in the air at normal conditions, as shown by comparative core level photoelectron spectroscopy

Atuchin V.V. , Golyashov V.A. , Kokh K.A. , Korolkov I.V. , Kozhukhov A.S. , Kruchinin V.N. , Loshkarev I.D. , Pokrovsky L.D. , Prosvirin I.P. , Romanyuk K.N. , Tereshchenko O.E.
Crystal Growth of Bi2Te3 and Noble Cleaved (0001) Surface Properties
Journal of Solid State Chemistry. 2016. V.236. P.203-208. DOI: 10.1016/j.jssc.2015.07.031 WOS Scopus РИНЦ CAPlusCA OpenAlex

Поступила в редакцию:	29 июн. 2015 г.
Принята к публикации:	21 июл. 2015 г.
Опубликована online:	26 июл. 2015 г.
Опубликована в печати:	1 апр. 2016 г.

Web of science:	WOS:000372672900026
Scopus:	2-s2.0-84961192792
РИНЦ:	27103868
Chemical Abstracts:	2015:1265752
Chemical Abstracts (print):	164:366583
OpenAlex:	W935123368

БД	Цитирований
Web of science	32
Scopus	32
РИНЦ	32
OpenAlex	32