Structure and Properties of ZnSxSe1-x Thin Films Deposited by Thermal Evaporation of ZnS and ZnSe Powder Mixtures Научная публикация
Журнал |
Materials Research Express
, E-ISSN: 2053-1591 |
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Вых. Данные | Год: 2015, Том: 2, Номер: 2, Номер статьи : 025006, Страниц : 9 DOI: 10.1088/2053-1591/2/2/025006 | ||||||||
Ключевые слова | Band gap; EXAFS spectroscopy; Raman spectroscopy; Thermal evaporation of ZnS and ZnSe powders mixture; Thin films of ZnSxSe1-x compounds; X-ray diffraction | ||||||||
Авторы |
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Организации |
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Информация о финансировании (4)
1 | Президиум РАН | 24 |
2 | Уральское отделение Российской академии наук | 12-П-2-1038 |
3 | Уральское отделение Российской академии наук | 12-С-2-1024 |
4 | Российский фонд фундаментальных исследований | 12-03-01039 (01201258422) |
Реферат:
Interest to ZnS x Se 1−x alloys is due to their band-gap tunability varying S and Se content. Films of ZnS x Se 1−x were grown evaporating ZnS and ZnSe powder mixtures onto SiO 2 , NaCl, Si and ITO sub-strates using an original low-cost method. X-ray diffraction patterns and Raman spectroscopy, show that the lattice structure of these films is cubic ZnSe-like, as S atoms replace Se and film compositions have their initial S/Se ratio. Optical absorption spectra show that band gap values increase from 2.25 to 3 eV as x increases, in agreement with the literature. Because S atomic radii are smaller than Se, EXAFS spectra confirm that bond distances and Se coordination numbers decrease as the Se content decrea-ses. The strong deviation from linearity of ZnSe coordination numbers in the ZnS x Se 1−x indicate that within this ordered crystal structure strong site occupation preferences occur in the distribution of Se and S ions. The behavior is quantitatively confirmed by the strong deviation from the random Ber-noulli distribution of the three sight occupation preference coefficients of the strained tetrahedron model. Actually, the ternary ZnS x Se 1−x system is a bi-binary (ZnS+ZnSe) alloy with evanescent forma-tion of ternary configurations throughout the x-range
Библиографическая ссылка:
Valeev R.G.
, Romanov E.A.
, Vorobiev V.L.
, Mukhgalin V.V.
, Kriventsov V.V.
, Chukavin A.I.
, Robouch B.
Structure and Properties of ZnSxSe1-x Thin Films Deposited by Thermal Evaporation of ZnS and ZnSe Powder Mixtures
Materials Research Express. 2015. V.2. N2. 025006 :1-9. DOI: 10.1088/2053-1591/2/2/025006 WOS Scopus РИНЦ CAPlus OpenAlex
Structure and Properties of ZnSxSe1-x Thin Films Deposited by Thermal Evaporation of ZnS and ZnSe Powder Mixtures
Materials Research Express. 2015. V.2. N2. 025006 :1-9. DOI: 10.1088/2053-1591/2/2/025006 WOS Scopus РИНЦ CAPlus OpenAlex
Даты:
Поступила в редакцию: | 3 июн. 2014 г. |
Принята к публикации: | 22 дек. 2014 г. |
Опубликована online: | 26 янв. 2015 г. |
Опубликована в печати: | 1 февр. 2015 г. |
Идентификаторы БД:
Web of science: | WOS:000369987600006 |
Scopus: | 2-s2.0-84953390198 |
РИНЦ: | 26879676 |
Chemical Abstracts: | 2015:311146 |
OpenAlex: | W2011080442 |