Plasma-Enhanced Chemical Vapor Deposition of Silicon Carbonitride Films from Volatile Silyl Derivatives of 1,1-Dimethylhydrazine | Sciact - CRIS-system of Boreskov Institute of Catalysis

Plasma-Enhanced Chemical Vapor Deposition of Silicon Carbonitride Films from Volatile Silyl Derivatives of 1,1-Dimethylhydrazine Full article

Journal

High Energy Chemistry
ISSN: 0018-1439

Output data

Year: 2003, Volume: 37, Number: 5, Pages: 303-309 Pages count : 7 DOI: 10.1023/A:1025700829352

Tags

Silyl; Carbon Nitride; Nitride Phase; Silyl Derivative; Nanosized Crystal

Authors

Smirnova T.P. ¹ , Badalyan A.M. ¹ , Borisov V.O. ¹ , Yakovkina L.V. ¹ , Kaichev V.V. ² , Shmakov A.N. ² , Nartova A.V. ² , Rakhlin V.I. ³ , Fomina A.N. ³

Affiliations

1	Institute of Inorganic Chemistry, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 3, Novosibirsk, 630090 Russia
2	Boreskov Institute of Catalysis, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 5, Novosibirsk, 630090 Russia
3	Favorskii Institute of Chemistry, Siberian Division, Russian Academy of Sciences, ul. Favorskogo 1, Irkutsk, 664029 Russia

Funding (2)

1	Siberian Branch of the Russian Academy of Sciences	114
2	Russian Foundation for Basic Research	03-03-32080

Silicon carbonitride films were synthesized from new volatile precursors by plasma-enhanced chemical vapor deposition. Based on a detailed study of the morphology of film surfaces, it was found that the layer material was an amorphous matrix with inclusions of nanosized crystals. Calculation of the structure of the crystalline phase from synchrotron X-ray diffraction patterns demonstrated that the entire set of the diffraction peaks detected is indexed by a tetragonal structure with the lattice parameters a = 9.6 Å and c = 6.4 Å. This is consistent with the fact that the carbon 1s and nitrogen 1s core level X-ray photoelectron spectra exhibited only sp3 bonding, which was expected for superhard carbon nitride phases.

Smirnova T.P. , Badalyan A.M. , Borisov V.O. , Yakovkina L.V. , Kaichev V.V. , Shmakov A.N. , Nartova A.V. , Rakhlin V.I. , Fomina A.N.
Plasma-Enhanced Chemical Vapor Deposition of Silicon Carbonitride Films from Volatile Silyl Derivatives of 1,1-Dimethylhydrazine
High Energy Chemistry. 2003. V.37. N5. P.303-309. DOI: 10.1023/A:1025700829352 WOS Scopus РИНЦ ANCAN OpenAlex

Смирнова Т.П. , Бадалян А.М. , Борисов В.О. , Яковкина Л.В. , Каичев В.В. , Шмаков А.Н. , Нартова А.В. , Рахлин В.И. , Фомина А.Н.
Плазмохимический газофазный процесс осаждения пленок карбонитрида кремния из летучих силильных производных несимметричного диметилгидразина
Химия высоких энергий. 2003. Т.37. №5. С.348-354. РИНЦ

Submitted:	Nov 18, 2002
Published print:	Sep 1, 2003

Web of science:	WOS:000185876000005
Scopus:	2-s2.0-0346655186
Elibrary:	13439184
Chemical Abstracts:	2003:720258
Chemical Abstracts (print):	140:80745
OpenAlex:	W2148026473

DB	Citing
Web of science	10
Scopus	12
Elibrary	11
OpenAlex	12