Capturing Properties of a Threefold Coordinated Silicon Atom in Silicon Nitride: Positive Correlation Energy Model Научная публикация
Журнал |
Physics of the Solid State
ISSN: 1063-7834 , E-ISSN: 1090-6460 |
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Вых. Данные | Год: 2003, Том: 45, Номер: 11, Страницы: 2031-2035 Страниц : 5 DOI: 10.1134/1.1626733 | ||||||
Ключевые слова | PARAMAGNETIC POINT-DEFECTS; NONVOLATILE MEMORY DEVICES; AMORPHOUS-SILICON; ELECTRONIC-STRUCTURE; WIGNER CRYSTALLIZATION; OPTICAL-ABSORPTION; FILMS; RESONANCE; CENTERS; OXIDE | ||||||
Авторы |
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Организации |
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Информация о финансировании (3)
1 | Government of Hong Kong | CityU 7001134 |
2 | Президиум РАН | |
3 | Сибирское отделение Российской академии наук | 116 |
Реферат:
The electronic structure and capturing properties of threefold coordinated silicon atoms (≡Si·) and the Si-Si bond in silicon nitride (Si3N4) were studied using the ab initio density functional theory. The results show that the previously proposed negative correlation energy (NCE) model is not applicable to Si3N4. The NCE model was proposed for interpreting the absence of the ESR signal for threefold coordinated silicon defects and suggested that an electron can transfer between two silicon defects. We proposed that the absence of this ESR signal is due to the creation of neutral diamagnetic Si-Si defects in Si3N4. This model offers the most fundamental theory for explaining the hole localization (memory) effect in silicon nitride.
Библиографическая ссылка:
Gritsenko V.A.
, Novikov Y.N.
, Shaposhnikov A.V.
, Wong H.
, Zhidomirov G.M.
Capturing Properties of a Threefold Coordinated Silicon Atom in Silicon Nitride: Positive Correlation Energy Model
Physics of the Solid State. 2003. V.45. N11. P.2031-2035. DOI: 10.1134/1.1626733 WOS Scopus РИНЦ
Capturing Properties of a Threefold Coordinated Silicon Atom in Silicon Nitride: Positive Correlation Energy Model
Physics of the Solid State. 2003. V.45. N11. P.2031-2035. DOI: 10.1134/1.1626733 WOS Scopus РИНЦ
Оригинальная:
Gritsenko V.A.
, Novikov Y.N.
, Shaposhnikov A.V.
, Wong H.
, Zhidomirov G.M.
Capturing Properties of Three-Fold Coordinated Silicon Atom in Silicon Nitride: A Positive Correlation Energy Model
Физика твердого тела. 2003. V.45. N11. P.1934-1937. РИНЦ
Capturing Properties of Three-Fold Coordinated Silicon Atom in Silicon Nitride: A Positive Correlation Energy Model
Физика твердого тела. 2003. V.45. N11. P.1934-1937. РИНЦ
Файлы:
Полный текст от издателя
Даты:
Поступила в редакцию: | 30 янв. 2003 г. |
Опубликована в печати: | 1 нояб. 2003 г. |
Идентификаторы БД:
Web of science | WOS:000186522400003 |
Scopus | 2-s2.0-0345149544 |
РИНЦ | 13424364 |
Chemical Abstracts | 2003:896620 |
Chemical Abstracts (print) | 140:187802 |
OpenAlex | W2154864816 |