Electronic Structure and Charge Transport Mechanism in a Forming-Free SiOx-Based Memristor
Научная публикация
| Общая информация |
Язык:
Английский,
Жанр:
Статья (Full article),
Статус опубликования:
Опубликована,
Оригинальность:
Оригинальная
|
| Журнал |
Nanotechnology
ISSN: 0957-4484
, E-ISSN: 1361-6528
|
| Вых. Данные |
Год: 2020,
Том: 31,
Номер: 50,
Номер статьи
: 505704,
Страниц
: 10
DOI:
10.1088/1361-6528/abb505
|
| Ключевые слова |
memristor; SiOx; charge transport mechanism; electronic structure |
| Авторы |
Gismatulin Andrei A.
1
,
Voronkovskii Vitalii A.
1
,
Kamaev Gennadiy N.
1
,
Novikov Yuriy N.
1
,
Kruchinin Vladimir N.
1
,
Krivyakin Grigory K.
1
,
Gritsenko Vladimir A.
1,2,3
,
Prosvirin Igor P.
4
,
Chin Albert
5
|
| Организации |
| 1 |
Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Ave., 630090, Novosibirsk, Russia
|
| 2 |
Novosibirsk State University, 2 Pirogov Str., 630090, Novosibirsk, Russia
|
| 3 |
Novosibirsk State Technical University, 20 Marx Ave., Novosibirsk 630073, Russia
|
| 4 |
Boreskov Institute of Catalysis SB RAS, 5 Lavrentiev ave., 630090, Novosibirsk, Russia
|
| 5 |
National Chiao Tung University Hsinchu, 300, Taiwan
|
|
Информация о финансировании (3)
|
1
|
Российский научный фонд
|
18-49-08001 (АААА-А18-118030590007-2)
|
|
2
|
Ministry of Science and Technology
|
107-2923-E-009-001-MY3
|
|
3
|
Российский научный фонд
|
19-19-00286 (АААА-А19-119120490056-8)
|
THe memristor is a key memory element for neuromorphic electronics and new generation flash memories. One of the most promising materials for memristor technology is silicon oxide SiOx, which is compatible with silicon-based technology. In this paper, the electronic structure and charge transport mechanism in a forming-free SiOx-based memristor fabricated with the plasma enhanced chemical vapor deposition method is investigated. The experimental current-voltage characteristics measured at different temperatures in high-resistance, low-resistance and intermediate states are compared with various charge transport theories. The charge transport in all states is limited by the space charge-limited current model. The trap parameters, responsible for the charge transport in a SiOx-based memristor in different states, are determined.