Chemical Composition and Structure of Thin Films Produced by Chemical Vapor Deposition Full article
Journal |
Journal of Structural Chemistry
ISSN: 0022-4766 , E-ISSN: 1573-8779 |
||
---|---|---|---|
Output data | Year: 2002, Volume: 43, Number: 4, Pages: 556-580 Pages count : 25 DOI: 10.1023/A:1022084017202 | ||
Tags | Boron Nitride; Iridium; Zinc Sulfide; Alkylamine; Chemical Vapor Deposition Method | ||
Authors |
|
||
Affiliations |
|
Abstract:
This paper reports results from studies of the chemical composition and structure of semiconducting, dielectric, and metallic films produced from molecular precursors by the chemical vapor deposition method. A study was made of films of zinc sulfides, mixed copper, cadmium, and zinc sulfides, boron nitride, carbonitride, silicon carbonitride, and iridium films. It is shown that the use of metal compounds with different ligands (zinc and manganese) enables production of zinc sulfide films in which manganese ions are uniformly incorporated into the zinc sulfide crystal lattice to substitute zinc at the lattice sites. For the films of simple and mixed cadmium, copper, and zinc sulfides, the film structure depends on the type of substrate. The thin layers of mixed cadmium and zinc sulfides are asubstitution solution with a hexagonal structure. The thin layers of boron nitride produced from borazine exhibit a nanocrystalline structure and are a mixture of cubic and hexagonal phases. Composite layers were produced from alkylamine boranes and their mixtures with ammonia. Depending on synthesis conditions, the layers are mixtures of hexagonal boron nitride, carbide, and carbonitride or pure boron nitride. Using silyl derivatives of asymmetric dimethylhydrazine containing Si—N and C—N bonds in the starting molecule, we produced silicon carbonitride films whose crystal habit belongs to a tetragonal structure with lattice parameters a = 9.6 Å and c = 6.4 Å. The iridium films obtained by thermal decomposition of iridium tris‐acetylacetonate(III) on quartz substrates in the presence of hydrogen have a polycrystalline structure with crystallite sizes of 50 to 500 Å. A method for determining grain‐size composition was proposed, and grain shapes for the iridium films were analyzed. The influence of substrate temperature on the internal microstructure and growth of the iridium films is demonstrated. At the iridium–substrate interface, a transition layer forms, whose composition depends on the substrate material and deposition conditions.
Cite:
Badalyan A.M.
, Belyi V.I.
, Gel'fond N.V.
, Igumenov I.K.
, Kosinova M.L.
, Morozova N.B.
, Rastorguev A.A.
, Rumyantsev Y.M.
, Smirnova T.P.
, Fainer N.I.
, Yakovkina L.V.
Chemical Composition and Structure of Thin Films Produced by Chemical Vapor Deposition
Journal of Structural Chemistry. 2002. V.43. N4. P.556-580. DOI: 10.1023/A:1022084017202 WOS Scopus РИНЦ
Chemical Composition and Structure of Thin Films Produced by Chemical Vapor Deposition
Journal of Structural Chemistry. 2002. V.43. N4. P.556-580. DOI: 10.1023/A:1022084017202 WOS Scopus РИНЦ
ArticleLinkType.TRANSLATED_TO_ORIGINAL:
Бадалян А.М.
, Белый В.И.
, Гельфонд Н.В.
, Игуменов И.К.
, Косинова М.Л.
, Морозова Н.Б.
, Расторгуев А.А.
, Румянцев Ю.М.
, Смирнова Т.П.
, Файнер Н.И.
, Яковкина Л.В.
Химическое строение и структура тонких пленок, полученных химическим осаждением из газовой фазы
Журнал структурной химии. 2002. Т.43. №4. С.605-628.
Химическое строение и структура тонких пленок, полученных химическим осаждением из газовой фазы
Журнал структурной химии. 2002. Т.43. №4. С.605-628.
Dates:
Submitted: | Mar 1, 2002 |
Published print: | Jul 1, 2002 |
Identifiers:
Web of science | WOS:000180764000003 |
Scopus | 2-s2.0-19044392848 |
Elibrary | 13406173 |
Chemical Abstracts | 2003:46810 |
Chemical Abstracts (print) | 138:291314 |
OpenAlex | W38307407 |