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Silicon Surface Cleaning Using XeF2 Gas Treatment Full article

Общее Language: Английский, Genre: Full article,
Status: Published, Source type: Original
Journal Applied Surface Science
ISSN: 0169-4332
Output data Year: 1995, Volume: 90, Number: 2, Pages: 191-194 Pages count : 4 DOI: 10.1016/0169-4332(95)00072-0
Tags ultrahigh vacuum; Si; desorption
Authors Aliev V.S. 1 , Baklanov M.R. 1 , Bukhtiyarov V.I. 2
Affiliations
1 Institute of Semiconductor Physics, Russian Academy of Sciences SB
2 Institute of Catalysis, Russian Academy of Sciences SB

Funding (1)

1 International Science Foundation U81 000

Abstract: XeF2 gas treatment has been studied with the aim of finding a new method of silicon surface cleaning. The clean silicon surface is usually obtained by growing a thin oxidized layer on the substrate surface. Then this layer is evaporated by in-situ annealing in ultra-high vacuum (UHV) conditions. In this work, instead of forming a thin oxidized layer, we produced SiFx (x = 1, 2, 3) terminations on the silicon surface treating the surface with XeF2 gas. The treatment in XeF2 vapors cleaned the Si surface from hydro-carbon contaminations so that silicon carbide is not formed on the surface during annealing. The SiFx terminations were completely removed by annealing the Si sample at a temperature higher than 723 K in UHV conditions. After annealing we did not observe any polluting atoms on the surface. Although the clean silicon surface was obtained at a temperature of about 723 K, a high structural perfection of the surface was observed only after additional annealing at 1023 K. This method of silicon surface cleaning, using treatment in XeF2 gas, may be used in molecular beam epitaxy.
Cite: Aliev V.S. , Baklanov M.R. , Bukhtiyarov V.I.
Silicon Surface Cleaning Using XeF2 Gas Treatment
Applied Surface Science. 1995. V.90. N2. P.191-194. DOI: 10.1016/0169-4332(95)00072-0 publication_identifier_short.wos_identifier_type publication_identifier_short.scopus_identifier_type publication_identifier_short.rinz_identifier_type
Dates:
Submitted: Oct 26, 1994
Accepted: May 7, 1995
Published print: Oct 1, 1995
Published online: Apr 21, 2000
Identifiers:
publication_identifier.wos_identifier_type WOS:A1995RW13300010
publication_identifier.scopus_identifier_type 2-s2.0-0029394329
publication_identifier.rinz_identifier_type 31162625
publication_identifier.accession_number_identifier_type 1995:802629
publication_identifier.chemical_accession_number_identifier_type 123:322849
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