Atomic and Electronic Structures of Lutetium Oxide Lu2O3
Full article
| Общее |
Language:
Английский,
Genre:
Full article,
Status:
Published,
Source type:
Translated
|
| Journal |
Journal of Experimental and Theoretical Physics
ISSN: 1063-7761
, E-ISSN: 1090-6509
|
| Output data |
Year: 2013,
Volume: 116,
Number: 2,
Pages: 323-329
Pages count
: 7
DOI:
10.1134/S1063776113020131
|
| Authors |
Kaichev V.V.
1
,
Asanova T.I.
2
,
Erenburg S.B.
2
,
Perevalov T.V.
3
,
Shvets V.A.
3
,
Gritsenko V.A.
3
|
| Affiliations |
| 1 |
Boreskov Institute of Catalysis SB RAS
|
| 2 |
Nikolaev Institute of Inorganic Chemistry SB RAS
|
| 3 |
Rzhanov Institute of Semiconductor Physics SB RAS
|
|
Funding (3)
|
1
|
Russian Foundation for Basic Research
|
12-08-31084
|
|
2
|
Президиум РАН
|
24.18
|
|
3
|
Президиум РАН
|
5.12
|
The chemical composition, electronic structure, structure, and physical properties a lutetium oxide Lu2O3 film are studied by X-ray photoelectron spectroscopy, ellipsometry, and X-ray absorption spectroscopy. The short-range order in Lu2O3 is found to correspond to its cubic modification. The binding energies of the 1s and 2p levels of oxygen and the 4d 5/2 and 4f 7/2 levels of lutetium are 529.2, 5.0 and 7.4, 195.9 eV, respectively. The energy gap determined from the electron energy loss spectrum of the film is 5.9 eV. The electron energy loss spectra have two peaks at 17.4 and 22.0 eV, which can be attributed to the excitation of bulk plasma oscillations. The dispersion of the refractive index is measured by spectral ellipsometry. The refractive index is shown to increase from 1.82 at 1.5 eV to 2.18 at 5.0 eV, and the high-frequency permittivity of Lu2O3 is 3.31.