Relaxation of Plasmons in nm-Sized Metal Particles Located on or Embedded in an Amorphous Semiconductor Full article
Journal |
Surface Science
ISSN: 0039-6028 |
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Output data | Year: 2005, Volume: 599, Number: 1-3, Pages: L372-L375 Pages count : 4 DOI: 10.1016/j.susc.2005.10.001 | ||||
Tags | Energy dissipation, Excitation of electron-hole pairs, Many body and quasi-particle theories, Nm-sized supported or embedded metal particles, Semiconducting support or matrix, Surface plasmons | ||||
Authors |
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Affiliations |
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Funding (1)
1 | Stiftelsen för strategisk forskning |
Abstract:
Relaxation of plasmons, generated optically in nm-sized metal particles, occurs usually via excitation of electron–hole pairs inside the particles. If a metal particle is located on the surface of or embedded in a semiconductor, plasmons may also relax via local field enhanced excitation of electron–hole pairs in the semiconductor. We derive equations describing the latter relaxation channel in the case when the semiconductor is amorphous or nanocrystalline and show that the ratio of the rates of the two channels may vary in a wide range. In particular, the latter channel may dominate under certain conditions. As an example, we briefly discuss the Ag/TiO2 system.
Cite:
Zhdanov V.P.
, Hägglund C.
, Kasemo B.
Relaxation of Plasmons in nm-Sized Metal Particles Located on or Embedded in an Amorphous Semiconductor
Surface Science. 2005. V.599. N1-3. P.L372-L375. DOI: 10.1016/j.susc.2005.10.001 WOS Scopus РИНЦ
Relaxation of Plasmons in nm-Sized Metal Particles Located on or Embedded in an Amorphous Semiconductor
Surface Science. 2005. V.599. N1-3. P.L372-L375. DOI: 10.1016/j.susc.2005.10.001 WOS Scopus РИНЦ
Dates:
Submitted: | May 22, 2005 |
Accepted: | Oct 5, 2005 |
Published online: | Oct 27, 2005 |
Published print: | Dec 30, 2005 |
Identifiers:
Web of science | WOS:000234132600002 |
Scopus | 2-s2.0-28544446076 |
Elibrary | 13498135 |
Chemical Abstracts | 2005:1296171 |
Chemical Abstracts (print) | 144:200840 |
OpenAlex | W2021469911 |