1
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Rybak A.A.
, Yushkov I.D.
, Nikolaev N.A.
, Kapishnikov A.V.
, Volodin A.M.
, Krivyakin G.K.
, Kamaev G.N.
, Geydt P.V.
Electrophysical Properties of Polycrystalline C12A7:e− Electride
Electronics. 2022.
V.11. N4. 668
:1-13. DOI: 10.3390/electronics11040668
WOS
Scopus
РИНЦ
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2
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Perevalov T.V.
, Volodin V.A.
, Kamaev G.N.
, Krivyakin G.K.
, Gritsenko V.A.
, Prosvirin I.P.
Electronic Structure and Nanoscale Potential Fluctuations in Strongly Nonstoichiometric PECVD SiOx
Journal of Non-Crystalline Solids. 2020.
V.529. 119796
:1-4. DOI: 10.1016/j.jnoncrysol.2019.119796
WOS
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РИНЦ
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3
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Gismatulin A.A.
, Voronkovskii V.A.
, Kamaev G.N.
, Novikov Y.N.
, Kruchinin V.N.
, Krivyakin G.K.
, Gritsenko V.A.
, Prosvirin I.P.
, Chin A.
Electronic Structure and Charge Transport Mechanism in a Forming-Free SiOx-Based Memristor
Nanotechnology. 2020.
V.31. N50. 505704
:1-10. DOI: 10.1088/1361-6528/abb505
WOS
Scopus
РИНЦ
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4
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Volodin V.A.
, Geydt P.
, Kamaev G.N.
, Gismatulin A.A.
, Krivyakin G.K.
, Prosvirin I.P.
, Azarov I.A.
, Fan Z.F.
, Vergnat M.
Resistive Switching in Non-Stoichiometric Germanosilicate Glass Films Containing Ge Nanoclusters
Electronics. 2020.
V.9. N12. 2103
:1-17. DOI: 10.3390/electronics9122103
WOS
Scopus
РИНЦ
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5
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Feklistov K.V.
, Lemzyakov A.G.
, Prosvirin I.P.
, Gismatulin A.A.
, Shklyaev A.A.
, Zhivodkov Y.A.
, Krivyakin G.К.
, Komonov A.I.
, Kozhukhov А.
, Spesivsev E.V.
, Gulyaev D.V.
, Abramkin D.S.
, Pugachev A.M.
, Esaev D.G.
, Sidorov G.Y.
Nanowired Structure, Optical Properties and Conduction Band Offset of RF Magnetron-Deposited n-Si\In2O3:Er Films
Materials Research Express. 2020.
V.7. N12. 125903
:1-11. DOI: 10.1088/2053-1591/abd06b
WOS
Scopus
РИНЦ
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