Nanowired Structure, Optical Properties and Conduction Band Offset of RF Magnetron-Deposited n-Si\In2O3:Er Films Full article
Journal |
Materials Research Express
, E-ISSN: 2053-1591 |
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Output data | Year: 2020, Volume: 7, Number: 12, Article number : 125903, Pages count : 11 DOI: 10.1088/2053-1591/abd06b | ||||||||||||
Tags | Silicon; In2O3; Er; thin films; nanowires; photoluminescence; band offset; thermionic emission; > | ||||||||||||
Authors |
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Affiliations |
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Funding (3)
1 | Ministry of Science and Higher Education of the Russian Federation | 0306-2019-0005 |
2 | Ministry of Science and Higher Education of the Russian Federation | 075-15-2020-797 (13.1902.21.0024) |
3 | Federal Agency for Scientific Organizations | 007-03-599 (АААА-А17-117052410033-9) |
Abstract:
RF magnetron-deposited Si\In2O3:Er films have the structure of the single-crystalline bixbyite bcc In2O3 nanowires bunched into the columns extended across the films. The obtained films have a typical In2O3 optical band gap of 3.55 eV and demonstrate the 1.54 mu m Er3+ room temperature photoluminescence. The current across the film flows inside the columns through the nanowires. The current through the MOS-structure with the intermediate low barrier In2O3:Er dielectric was investigated by the thermionic emission approach, with respect to the partial voltage drop in silicon. Schottky plots ln(I/T-2) versus 1/kT of forward currents at small biases and backward currents in saturation give the electron forward n-Si\In2O3:Er barrier equal to 0.14 eV and the backward In\In2O3:Er barrier equal to 0.21 eV.
Cite:
Feklistov K.V.
, Lemzyakov A.G.
, Prosvirin I.P.
, Gismatulin A.A.
, Shklyaev A.A.
, Zhivodkov Y.A.
, Krivyakin G.К.
, Komonov A.I.
, Kozhukhov А.
, Spesivsev E.V.
, Gulyaev D.V.
, Abramkin D.S.
, Pugachev A.M.
, Esaev D.G.
, Sidorov G.Y.
Nanowired Structure, Optical Properties and Conduction Band Offset of RF Magnetron-Deposited n-Si\In2O3:Er Films
Materials Research Express. 2020. V.7. N12. 125903 :1-11. DOI: 10.1088/2053-1591/abd06b WOS Scopus РИНЦ
Nanowired Structure, Optical Properties and Conduction Band Offset of RF Magnetron-Deposited n-Si\In2O3:Er Films
Materials Research Express. 2020. V.7. N12. 125903 :1-11. DOI: 10.1088/2053-1591/abd06b WOS Scopus РИНЦ
Files:
Full text from publisher
Dates:
Submitted: | Oct 24, 2020 |
Accepted: | Dec 3, 2020 |
Published online: | Dec 16, 2020 |
Identifiers:
Web of science | WOS:000599483800001 |
Scopus | 2-s2.0-85098750392 |
Elibrary | 45035535 |
Chemical Abstracts | 2021:390496 |
OpenAlex | W3107987152 |