Abstract: Iridium films were deposited on flat quartz substrates by MO CVD from iridium tris-acetilacetonate; these processes were performed at atmospheric pressure in the presence of hydrogen, and substrate temperatures were varied in the range 350–550°C. X-ray photoelectron spectroscopy was used to study film composition: carbon- and oxygen-containing impurities (up to one monolayer) are present on the surface of all the films. During etching by argon ions up to the film-substrate boundary only iridium lines were observed in the spectra. Subsequent etching results in the decrease of the intensity of the iridium lines and the appearance of lines of the substrate material — Si2p, Si2s and O 1s. In the region of the Ir-SiO2 boundary there is a transition layer where a compound of the type IrSixOy is formed. The thickness of this layer increases with increasing deposition temperature. For films deposited at T > 500°C differential charging effects were found, i.e. the samples contain two phases - conductive and nonconductive ones. This might be due to the crystallization of two phases - metallic and “silicate”. The existence of differential charging can also be explained by grain size effects which depend on the deposition temperature.

Cite: Gelfond N.V. , Igumenov I.K. , Boronin A.I. , Bukhtiyarov V.I. , Smirnov M.Y. , Prosvirin I.P. , Kwon R.I.
An XPS Study of the Composition of Iridium Films Obtained by MO CVD
Surface Science. 1992. V.275. N3. P.323-331. DOI: 10.1016/0039-6028(92)90804-F WOS Scopus РИНЦ ANCAN OpenAlex

Dates:

Submitted:	Jul 15, 1991
Accepted:	Apr 8, 1992
Published print:	Sep 15, 1992
Published online:	Sep 23, 2002

Identifiers:

Web of science:	WOS:A1992JL93500020
Scopus:	2-s2.0-0026914115
Elibrary:	31110069
Chemical Abstracts:	1992:599134
Chemical Abstracts (print):	117:199134
OpenAlex:	W1998175726

Citing:

DB	Citing
Web of science	40
Scopus	39
Elibrary	42
OpenAlex	35

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