Stability of (0001) Bi2Te3 surface | Sciact - CRIS-system of Boreskov Institute of Catalysis

Stability of (0001) Bi2Te3 surface Conference Abstracts

Conference

Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists
30 Jun - 4 Jul 2011 , Erlagol, Altai

Source

2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings
Compilation, 2011.

Output data

Year: 2011, Pages: 66-67 Pages count : 3 DOI: 10.1109/EDM.2011.6006896

Tags

Bi 2Te3, Bi2Se3, Oxide, surface, Topological insulator

Authors

Makarenko Sergey V. ¹ , Atuchin Viktor V. ² , Kokh Konstantin A. ³ , Golyashov Vladimir A. ¹ , Kozhukhov Anton S. ¹ , Prosvirin Igor P. ⁴ , Tereshhenko Oleg E. ^1,2

Affiliations

1	Novosibirsk State University, Novosibirsk 630090, Russia
2	A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia
3	V.S. Sobolev Institute of Geology and Mineralogy, SB RAS, Novosibirsk, Russia
4	Boreskov Institute of Catalysis, SB RAS, Novosibirsk, Russia

The surface stability of single crystals Bi2Se3 and Bi2Te3 has been studied by XPS, AFM, STM and RHEED techniques. The Bi2Se3 and Bi2Te3 single crystals were grown by vertical Bridgman method. Crystal cleaving induced atomically flat surfaces over 1 cm2 area. XPS revealed that cleaved Bi2Se3 and Bi2Te3 surface were stable to oxidation over two months. The surfaces are sufficiently inert to obtain STM atomic resolution even in two weeks after cleaved.

Makarenko S.V. , Atuchin V.V. , Kokh K.A. , Golyashov V.A. , Kozhukhov A.S. , Prosvirin I.P. , Tereshhenko O.E.
Stability of (0001) Bi2Te3 surface
In compilation 2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings. 2011. – C.66-67. DOI: 10.1109/EDM.2011.6006896 Scopus РИНЦ ANCAN OpenAlex

Published print:

Jun 1, 2011

Scopus:	2-s2.0-80052839994
Elibrary:	18005633
Chemical Abstracts:	2012:1206304
Chemical Abstracts (print):	157:306858
OpenAlex:	W2154790395

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