Influence of the Growth Temperature on the Defective Structure of the Multi-Walled Carbon Nanotubes | Sciact - CRIS-система Института катализа

Influence of the Growth Temperature on the Defective Structure of the Multi-Walled Carbon Nanotubes Научная публикация

Журнал

Physica Status Solidi (B): Basic Research
ISSN: 0370-1972 , E-ISSN: 1521-3951

Вых. Данные

Год: 2018, Том: 255, Номер: 1, Номер статьи : 1700255, Страниц : 6 DOI: 10.1002/pssb.201700255

Ключевые слова

conductivity, defects, multi-walled carbon nanotubes, Raman spectroscopy

Авторы

Krasnikov Dmitry V. ^1,2 , Bokova-Sirosh Sofya N. ³ , Tsendsuren Tsog-Ochir ^1,2 , Romanenko Anatoly I. ⁴ , Obraztsova Elena D. ³ , Volodin Vladimir A. ^2,5 , Kuznetsov Vladimir L. ^1,2

Организации

1	Boreskov Institute of Catalysis SB RAS, Lavrentieva ave. 5, 630090 Novosibirsk, Russia
2	Novosibirsk State University, Pirogova str. 2, 630090 Novosibirsk, Russia
3	A.M. Prokhorov General Physics Institute RAS, Vavilov str. 38, 119991 Moscow, Russia
4	Nikolaev Institute of Inorganic Chemistry, SB RAS, Lavrentieva ave. 3, 630090 Novosibirsk, Russia
5	Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentieva ave. 13, 630090 Novosibirsk, Russia

Информация о финансировании (1)

Федеральное агентство научных организаций России

0303-2016-0003

The present paper is devoted to the influence of the growth temperature of multi-walled carbon nanotubes (MWCNTs) on their defective structure. The MWCNTs obtained within the range of 610–750 °C have been studied using two methods: Raman spectroscopy and the analysis of the temperature dependence of conductivity. This approach allows us to obtain independent data on the concentration of the defects within the MWCNTs via the intensity ratio of 2D and D bands, on one hand, and charge carrier concentration, on the other hand. The results obtained using Raman spectroscopy and the analysis of the conductivity have provided asymptotic and volcano-like curves, respectively, of defect concentration within the temperature range studied. This can be attributed to the difference in the probing depth of each method (∼50 nm for Raman spectroscopy, and ∼2–3 nm for conductivity measurements) providing different sensitivity to surface impurities or defects. The secondary factors (the size of the active component, the amount of the lateral carbon deposits) have been shown to mask the influence of the growth temperature. Nevertheless, as these secondary factors and the synthesis temperature independently affect the effective nanotube defectiveness, we have shown the defect concentration to fall with increasing MWCNT growth temperature.

Krasnikov D.V. , Bokova-Sirosh S.N. , Tsendsuren T-O. , Romanenko A.I. , Obraztsova E.D. , Volodin V.A. , Kuznetsov V.L.
Influence of the Growth Temperature on the Defective Structure of the Multi-Walled Carbon Nanotubes
Physica Status Solidi (B): Basic Research. 2018. V.255. N1. 1700255 :1-6. DOI: 10.1002/pssb.201700255 WOS Scopus РИНЦ CAPlus OpenAlex

Поступила в редакцию:	31 мая 2017 г.
Принята к публикации:	26 июл. 2017 г.
Опубликована online:	12 сент. 2017 г.
Опубликована в печати:	1 янв. 2018 г.

Web of science:	WOS:000422746100011
Scopus:	2-s2.0-85040795019
РИНЦ:	35518360
Chemical Abstracts:	2017:1472165
OpenAlex:	W2754739606

БД	Цитирований
Web of science	16
Scopus	17
РИНЦ	15
OpenAlex	18