Atomic and Electronic Structure of Ferroelectric La-Doped HfO2 Films | Sciact - CRIS-система Института катализа

Atomic and Electronic Structure of Ferroelectric La-Doped HfO2 Films Научная публикация

Журнал

Materials Research Express
, E-ISSN: 2053-1591

Вых. Данные

Год: 2019, Том: 6, Номер: 3, Номер статьи : 036403, Страниц : 7 DOI: 10.1088/2053-1591/aaf436

Ключевые слова

hafnium oxide, photoelectron spectra, HRTEM, specroellipsometry, DFT, oxygen vacancy, FRAM

Авторы

Perevalov T V ^1,2 , Gutakovskii A K ¹ , Kruchinin V N ¹ , Gritsenko V A ^1,2,3 , Prosvirin I P ⁴

Организации

1	Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev ave., 630090, Novosibirsk, Russia
2	Novosibirsk State University, 2 Pirogov str., 630090 Novosibirsk, Russia
3	Novosibirsk State Technical University, 20 K. Marx ave., 630073, Novosibirsk, Russia
4	Boreskov Institute of Catalysis SB RAS 5 Lavrentiev ave., 630090, Novosibirsk, Russia

Информация о финансировании (2)

1	Российский научный фонд	14-22-00143
2	Российский научный фонд	14-19-00192

The atomic structure and optical properties of ferroelectric La-doped hafnium oxide (La:HfO2) thin films grown by the plasma-assisted atomic layer deposition were investigated. Using high resolution transmission electron microscopy, it was shown that the studied La:HfO2 film has a orthorhombic polar structure with the Pmn21 space group. It was found that the film exhibits ferroelectric properties. By means of x-ray photoelectron spectroscopy and specroellipsometry it was established that La:HfO2 consists of the HfO2 and La2O3 phases mixture. The specroellipsometry analysis with the Bruggeman effective medium approximation showed that the investigated La:HfO2 consists of 88% HfO2 and 12% La2O3. It is shown that etching La:HfO2 with argon ions leads to the oxygen vacancies generation in the near-surface region. These vacancies are generated mainly due to the knocking out of oxygen atoms to the interstitial positions, and the following annealing at 700 °C in vacuum for 1 h leads to the annihilation of that Frenkel defects.

Perevalov T.V. , Gutakovskii A.K. , Kruchinin V.N. , Gritsenko V.A. , Prosvirin I.P.
Atomic and Electronic Structure of Ferroelectric La-Doped HfO2 Films
Materials Research Express. 2019. V.6. N3. 036403 :1-7. DOI: 10.1088/2053-1591/aaf436 WOS Scopus РИНЦ CAPlus OpenAlex

Поступила в редакцию:	14 нояб. 2018 г.
Принята к публикации:	27 нояб. 2018 г.
Опубликована online:	5 дек. 2018 г.
Опубликована в печати:	1 мар. 2019 г.

Web of science:	WOS:000452701300003
Scopus:	2-s2.0-85059244428
РИНЦ:	38635371
Chemical Abstracts:	2019:836529
OpenAlex:	W2902290026

БД	Цитирований
Scopus	23
Web of science	23
РИНЦ	23
OpenAlex	23