Formation of SnO and SnO2 Phases During the Annealing of SnO(x) Films Obtained by Molecular Beam Epitaxy | Sciact - CRIS-system of Boreskov Institute of Catalysis

Formation of SnO and SnO2 Phases During the Annealing of SnO(x) Films Obtained by Molecular Beam Epitaxy Full article

Conference

3rd International Conference on Applied Surface Science
17-19 Jun 2019 , Pisa

Journal

Applied Surface Science
ISSN: 0169-4332

Output data

Year: 2020, Volume: 512, Article number : 145735, Pages count : 7 DOI: 10.1016/j.apsusc.2020.145735

Tags

Absorption edge; Molecular-beam epitaxy; Morphology; Photoluminescence; Raman spectroscopy; Refractive index; Tin oxide; X-ray phase analysis; X-ray photoelectron spectroscopy

Authors

Nikiforov Alexander ^1,2 , Timofeev Vyacheslav ¹ , Mashanov Vladimir ¹ , Azarov Ivan ^1,5 , Loshkarev Ivan ¹ , Volodin Vladimir ^1,5 , Gulyaev Dmitry ¹ , Chetyrin Igor ³ , Korolkov Ilya ^4,5

Affiliations

1	A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, Russia
2	National Research Tomsk State University, 36 Lenin Avenue, Tomsk 634050, Russia
3	Boreskov Institute of Catalysis SB RAS, 5 Lavrentyev Avenue, Novosibirsk 630090, Russia
4	Nikolaev Institute of Inorganic Chemistry SB RAS, 3 Lavrentyev Avenue, Novosibirsk 630090, Russia
5	Novosibirsk State University, 1 Pirogov str., Novosibirsk 630090, Russia

Funding (4)

1	Russian Foundation for Basic Research	18-32-20064 (АААА-А19-119090490028-1)
2	Russian Foundation for Basic Research	18-42-540018
3	Russian Foundation for Basic Research	18-52-41006 (АААА-А18-118060490033-9)
4	Ministry of Science and Higher Education of the Russian Federation	0306-2019-0019

SnO and SnO2 films were obtained on the SiO2 surface by the molecular-beam epitaxy method. The initial films are in the polycrystalline phase. The annealing of SnO(x) films at a temperature of 300 °C resulted in the formation of the tetragonal SnO phase. Three vibration modes Eg, A1g, and B1g with the frequencies of Sn[sbnd]O bond vibrations of 113, 211 and ~360 cm−1, respectively, which correspond to the SnO phase, were first observed by the Raman spectroscopy method. The orthorhombic SnO2 films were obtained by increasing the annealing temperature to 500 °C. Based on the valence band XPS (X-ray photoelectron spectroscopy) spectrum, several features with the binding energy approximately 5 eV, 7.5 eV and 11 eV, which are the same with the valence band of SnO2, were identified. The refractive index and absorption coefficient were investigated by the spectral ellipsometry technique. The high absorption coefficients correspond to the high Sn content. The film dielectric properties were revealed at the temperature higher than 300 °C. The refractive index values lie in the range of 1.5–2.6 for the visible spectral region. The pronounced absorption edges at 2.85 eV and 3.6 eV corresponding to those of stannous oxide (SnO) and stannic oxide (SnO2) were observed. The photoluminescence (PL) from the SnO(x) films was observed at room temperature. The increase of the annealing temperature resulted in the increase of PL intensity. Such PL intensity behavior is likely due to the Sn nanoislands. © 2020 Elsevier B.V.

Nikiforov A. , Timofeev V. , Mashanov V. , Azarov I. , Loshkarev I. , Volodin V. , Gulyaev D. , Chetyrin I. , Korolkov I.
Formation of SnO and SnO2 Phases During the Annealing of SnO(x) Films Obtained by Molecular Beam Epitaxy
Applied Surface Science. 2020. V.512. 145735 :1-7. DOI: 10.1016/j.apsusc.2020.145735 WOS Scopus РИНЦ AN OpenAlex

Submitted:	Oct 7, 2019
Accepted:	Feb 10, 2020
Published online:	Feb 11, 2020
Published print:	May 15, 2020

Web of science:	WOS:000522731700099
Scopus:	2-s2.0-85079325375
Elibrary:	43239835
Chemical Abstracts:	2020:398741
OpenAlex:	W3006599483

DB	Citing
Scopus	53
Web of science	51
Elibrary	43
OpenAlex	56