Terbium Oxide Films Grown by Chemical Vapor Deposition from Terbium(III) Dipivaloylmethanate Full article
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Inorganic Materials
ISSN: 0020-1685 , E-ISSN: 1608-3172 |
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| Output data | Year: 2014, Volume: 50, Number: 4, Pages: 379-386 Pages count : 8 DOI: 10.1134/S0020168514040037 | ||||
| Tags | Chemical Vapor Deposition; Terbium; Raman Spectroscopy Data; Terbium Oxide; Decrease Substrate Temperature | ||||
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Abstract:
Terbium oxide films have been grown on Si(111) substrates by decomposition of Tb(dpm)3 vapor in argon flow at Tb(dpm)3 source temperatures of 170 and 190°C and substrate temperatures from 470 to 550°C. The films have been annealed in air at temperatures of 400, 650, and 800°C. Xray diffraction characterization results show that the films grown by chemical vapor deposition consist of cubic Tb2O3. The films annealed in air at 650 and 800°C are isostructural with Tb4O7, and those annealed at 400°C are isostructural with Tb11O20. According to Xray photoelectron spectroscopy data, the 9nmthick surface layer of the Tb2O3 film has the correct stoichiometry O : Tb = 1.48, whereas the film annealed at 800°C has O : Tb = 1.85. Raman spectroscopy data demonstrate that the concentration of carboncontaining species on the surface of the films decreases with decreasing substrate temperature and can be brought to zero by air annealing at 800°C.
Cite:
Belaya S.V.
, Bakovets V.V.
, Boronin A.I.
, Koshcheev S.V.
, Lobzareva M.N.
, Korolkov I.V.
, Stabnikov P.A.
Terbium Oxide Films Grown by Chemical Vapor Deposition from Terbium(III) Dipivaloylmethanate
Inorganic Materials. 2014. V.50. N4. P.379-386. DOI: 10.1134/S0020168514040037 WOS Scopus РИНЦ ANCAN OpenAlex
Terbium Oxide Films Grown by Chemical Vapor Deposition from Terbium(III) Dipivaloylmethanate
Inorganic Materials. 2014. V.50. N4. P.379-386. DOI: 10.1134/S0020168514040037 WOS Scopus РИНЦ ANCAN OpenAlex
Original:
Белая С.В.
, Баковец В.В.
, Боронин А.И.
, Кощеев С.В.
, Лобзарева М.Н.
, Корольков И.В.
, Стабников П.А.
Пленки оксидов тербия, полученные химическим осаждением из паров трис-дипивалоилметаната тербия
Неорганические материалы. 2014. Т.50. №4. С.410-417. DOI: 10.7868/S0002337X14040034 РИНЦ OpenAlex
Пленки оксидов тербия, полученные химическим осаждением из паров трис-дипивалоилметаната тербия
Неорганические материалы. 2014. Т.50. №4. С.410-417. DOI: 10.7868/S0002337X14040034 РИНЦ OpenAlex
Dates:
| Submitted: | Aug 16, 2013 |
| Published online: | Mar 18, 2014 |
| Published print: | Apr 1, 2014 |
Identifiers:
| Web of science: | WOS:000333131200010 |
| Scopus: | 2-s2.0-84897081397 |
| Elibrary: | 21869605 |
| Chemical Abstracts: | 2014:440661 |
| Chemical Abstracts (print): | 162:331031 |
| OpenAlex: | W2128218011 |