Electronic Structure and Optical Quality of Nanocrystalline Y2O3 Film Surfaces and Interfaces on Silicon | Sciact - CRIS-система Института катализа

Electronic Structure and Optical Quality of Nanocrystalline Y2O3 Film Surfaces and Interfaces on Silicon Научная публикация

Журнал

The Journal of Physical Chemistry C
ISSN: 1932-7447 , E-ISSN: 1932-7455

Вых. Данные

Год: 2014, Том: 118, Номер: 25, Страницы: 13644-13651 Страниц : 8 DOI: 10.1021/jp502876r

Ключевые слова

Binding energy; Chemical bonds; Deposition; Depth profiling; Electronic structure; Nanocrystalline silicon; Nanocrystals; Oxide films; Refractive index; Silicon compounds; Spectroscopic ellipsometry; Substrates; Thin films; X ray photoelectron spectroscopy; Yttrium oxide

Авторы

Rubio E.J. ¹ , Atuchin V.V. ^2,3,4 , Kruchinin V.N. ⁵ , Pokrovskii L.D. ² , Prosvirin I.P. ⁶ , Ramana C.V. ¹

Организации

1	Department of Mechanical Engineering, University of Texas at El Paso, El Paso, Texas 79968, United States
2	Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
3	Functional Electronics Laboratory, Tomsk State University, Tomsk 634050, Russia
4	Laboratory of Semiconductor and Dielectric Materials, Novosibirsk State University, Novosibirsk 630090, Russia
5	Laboratory for Ellipsometry of Semiconductor Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
6	Boreskov Institute of Catalysis, SB RAS, Novosibirsk 630090, Russia

Информация о финансировании (2)

1	Министерство образования и науки Российской Федерации
2	National Science Foundation	DMR-1205302

Nanocrystalline yttrium oxide (Y2O3) thin films were made by sputter deposition onto silicon (100) substrates keeping the deposition temperature fixed at 300 °C. The surface/interface chemistry, Y–O bonding, and optical constants of the Y2O3 film surface and Y2O3–Si interface were evaluated by the combined use of X-ray photoelectron spectroscopy (XPS), depth-profiling, and spectroscopic ellipsometry (SE). XPS analyses indicate the binding energies (BEs) of the Y 3d doublet; i.e., the Y 3p5/2 and Y 3d3/2 peaks are located at 117.0 and 119.1 eV, respectively, characterizing yttrium in its highest chemical oxidation state (Y3+) in the grown films. The optical model is constructed based on the XPS depth profiles, which indicate that the Y2O3//Si heterostructure can be represented with Y2O3 film—YxSiyOz interfacial compound—Si substrate. Such a model accounts for the experimentally determined ellipsometry functions and accurately produces the dispersive index of refraction (n(λ)) of Y2O3 and YxSiyOz. The n(λ) of Y2O3 and YxSiyOz follows Cauchy’s dispersion relation, while the YxSiyOz formation accounts for degradation of optical quality.

Rubio E.J. , Atuchin V.V. , Kruchinin V.N. , Pokrovskii L.D. , Prosvirin I.P. , Ramana C.V.
Electronic Structure and Optical Quality of Nanocrystalline Y2O3 Film Surfaces and Interfaces on Silicon
The Journal of Physical Chemistry C. 2014. V.118. N25. P.13644-13651. DOI: 10.1021/jp502876r WOS Scopus РИНЦ CAPlusCA OpenAlex

Поступила в редакцию:	23 мар. 2014 г.
Принята к публикации:	15 мая 2014 г.
Опубликована online:	11 июн. 2014 г.
Опубликована в печати:	26 июн. 2014 г.

Web of science:	WOS:000338184300036
Scopus:	2-s2.0-84911464554
РИНЦ:	24006376
Chemical Abstracts:	2014:901907
Chemical Abstracts (print):	161:104868
OpenAlex:	W2317085288

БД	Цитирований
Web of science	104
Scopus	106
РИНЦ	97
OpenAlex	102