Growth, Chemical Composition, and Structure of Thin LaxHf1-xOy films on Si Научная публикация
| Журнал |
Inorganic Materials
ISSN: 0020-1685 , E-ISSN: 1608-3172 |
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| Вых. Данные | Год: 2014, Том: 50, Номер: 2, Страницы: 158-164 Страниц : 7 DOI: 10.1134/S0020168514020162 | ||||
| Ключевые слова | Hafnium; Pyrochlore Structure; Hafnium Dioxide; Heterovalent Impurity; Metal Organic Chemical Vapor Depo | ||||
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| Организации |
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Информация о финансировании (1)
| 1 | Российский фонд фундаментальных исследований | 12-03-00131 |
Реферат:
The chemical structure, phase composition, and crystal structure of LaxHf1 – xOy films grown on Si using volatile metalorganic compounds as Hf and La precursors have been studied by Xray diffraction, X-ray photoelectron spectroscopy, energy dispersive Xray microanalysis, and atomic force microscopy. By varying the lanthanum and hafnium source temperatures, we were able to grow films with 2 at % < CLa < 30 at %. The Hf 4f and La 3d peak positions in the XPS spectra of the films correspond to hafnium and lanthanum in the Hf4+ and La3+ states. With increasing La concentration, the reflections in the Xray diffraction patterns of the films shift to smaller 2θ angles, indicating the formation of solid solutions. At 18 at % La, we observed a transition from a fluoritelike structure to the pyrochlore structure (La2Hf2O7). The film containing 30 at % La consisted of a mixture of cLa2O3 and La2Hf2O7. The surface roughness of the films was shown to increase with increasing La concentration. Capacitance–voltage (C–V) measurements were used to assess the relative permittivity (k) of the films as a function of La concentration.
The minimum k value was obtained at the La concentration corresponding to the transition from the fluorite structure to an ordered pyrochlore structure (secondorder phase transition).
Библиографическая ссылка:
Smirnova T.P.
, Yakovkina L.V.
, Borisov V.O.
, Kichai V.N.
, Kaichev V.V.
, Saraev A.A.
Growth, Chemical Composition, and Structure of Thin LaxHf1-xOy films on Si
Inorganic Materials. 2014. V.50. N2. P.158-164. DOI: 10.1134/S0020168514020162 WOS Scopus РИНЦ CAPlusCA OpenAlex
Growth, Chemical Composition, and Structure of Thin LaxHf1-xOy films on Si
Inorganic Materials. 2014. V.50. N2. P.158-164. DOI: 10.1134/S0020168514020162 WOS Scopus РИНЦ CAPlusCA OpenAlex
Оригинальная:
Смирнова Т.П.
, Яковкина Л.В.
, Борисов В.О.
, Кичай В.Н.
, Каичев В.В.
, Сараев А.А.
Синтез, химический состав и структура тонких пленок LaxHf1–xOy/Si
Неорганические материалы. 2014. Т.50. №2. С.175-182. DOI: 10.7868/S0002337X1402016X РИНЦ OpenAlex
Синтез, химический состав и структура тонких пленок LaxHf1–xOy/Si
Неорганические материалы. 2014. Т.50. №2. С.175-182. DOI: 10.7868/S0002337X1402016X РИНЦ OpenAlex
Даты:
| Поступила в редакцию: | 21 мая 2013 г. |
| Опубликована online: | 29 янв. 2014 г. |
| Опубликована в печати: | 1 февр. 2014 г. |
Идентификаторы БД:
| Web of science: | WOS:000330345800010 |
| Scopus: | 2-s2.0-84893866769 |
| РИНЦ: | 21864836 |
| Chemical Abstracts: | 2014:149183 |
| Chemical Abstracts (print): | 161:411025 |
| OpenAlex: | W2466832659 |