X-Ray Photoelectron Spectroscopy Depth Profiling of La 2O 3/Si Thin Films Deposited by Reactive Magnetron Sputtering | Sciact - CRIS-система Института катализа

X-Ray Photoelectron Spectroscopy Depth Profiling of La 2O 3/Si Thin Films Deposited by Reactive Magnetron Sputtering Научная публикация

Журнал

ACS Applied Materials and Interfaces
ISSN: 1944-8244 , E-ISSN: 1944-8252

Вых. Данные

Год: 2011, Том: 3, Номер: 11, Страницы: 4370-4373 Страниц : 4 DOI: 10.1021/am201021m

Ключевые слова

high-k dielectric, lanthanum trioxide, RHEED, thin films, XPS

Авторы

Ramana C.V. ¹ , Vemuri R.S. ¹ , Kaichev V.V. ^2,4 , Kochubey V.A. ³ , Saraev A.A. ^2,4 , Atuchin V.V. ⁴

Организации

1	Department of Mechanical Engineering, University of Texas at El Paso, El Paso, Texas 79968, United States
2	Boreskov Institute of Catalysis
3	Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk, 630090, Russia
4	Physical Department, Novosibirsk State University, Novosibirsk, 630090, Russia

The La2O3/Si thin films have been deposited by reactive DC magnetron sputtering. Amorphous state of La2O3 layer has been shown by RHEED observation. Top surface chemistry of the a-La2O3 has been evaluated with layer-by-layer depth profiling by ion bombardment and XPS measurements. It was found by core level spectroscopy that the top surface of the a-La2O3 film consists of hydrocarbon admixture, lanthanum carbonate, and hydroxides that formed as a result of contact with air atmosphere. Thickness of this top surface modified layer is below 1 nm for a contact time of ∼1.5 h with air at normal conditions

Ramana C.V. , Vemuri R.S. , Kaichev V.V. , Kochubey V.A. , Saraev A.A. , Atuchin V.V.
X-Ray Photoelectron Spectroscopy Depth Profiling of La 2O 3/Si Thin Films Deposited by Reactive Magnetron Sputtering
ACS Applied Materials and Interfaces. 2011. V.3. N11. P.4370-4373. DOI: 10.1021/am201021m WOS Scopus РИНЦ CAPlusCA OpenAlex

Поступила в редакцию:	2 авг. 2011 г.
Принята к публикации:	3 окт. 2011 г.
Опубликована online:	3 окт. 2011 г.
Опубликована в печати:	23 нояб. 2011 г.

Web of science:	WOS:000297195500030
Scopus:	2-s2.0-84855884394
РИНЦ:	18033653
Chemical Abstracts:	2011:1310738
Chemical Abstracts (print):	155:630324
OpenAlex:	W2322862231

БД	Цитирований
Web of science	154
Scopus	165
РИНЦ	154
OpenAlex	161