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Composition, Atomic Structure and Electronic Properties of Fluorine Passivated InAs(111)A/Anodic Oxide Interface Тезисы доклада

Конференция

12th Annual Conference YUCOMAT 2010
06-10 сент. 2010 , Herceg Novi

Сборник

Programme and The Book of Abstracts / Twelfth Annual Conference YUCOMAT 2010, Herceg Novi, September 6–10, 2010
Сборник, ITS of SASA. Belgrade.2010. 198 c. ISBN 9788680321189.

Вых. Данные

Год: 2010, Номер статьи : O.S.B.2, Страниц : 1

Авторы

Valisheva N.A. ¹ , Tereshchenko O.E. ^1,2 , Kruchinin V.N. ¹ , Eremeev S.V. ^3,4 , Kulkova S.E. ^3,4 , Kalinkin A.V. ⁵

Организации

1	Novosibirsk Institute of Semiconductor Physics, Novosibirsk, Russian Federation
2	Novosibirsk State University, Novosibirsk, Russian Federation
3	Institute of Strength Physics and Materials Science, Tomsk, Russian Federation
4	Tomsk State University, Tomsk, Russian Federation
5	Boreskov Institute of Catalysis, Novosibirsk, Russian Federation

Valisheva N.A. , Tereshchenko O.E. , Kruchinin V.N. , Eremeev S.V. , Kulkova S.E. , Kalinkin A.V.
Composition, Atomic Structure and Electronic Properties of Fluorine Passivated InAs(111)A/Anodic Oxide Interface
В сборнике Programme and The Book of Abstracts / Twelfth Annual Conference YUCOMAT 2010, Herceg Novi, September 6–10, 2010. – ITS of SASA., 2010. – C.13. – ISBN 9788680321189.

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