The Dislocation Structure of Diamond Crystals Grown on Seeds in the Mg-C System Научная публикация
| Журнал |
Diamond and Related Materials
ISSN: 0925-9635 , E-ISSN: 1879-0062 |
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| Вых. Данные | Год: 2016, Том: 70, Страницы: 1-6 Страниц : 6 DOI: 10.1016/j.diamond.2016.09.012 | ||||||
| Ключевые слова | Dislocations; Etching; High pressure and high temperature; Synthetic diamond; X-ray topography | ||||||
| Авторы |
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Реферат:
The dislocation structure of diamond crystals grown in the Mg-C system at a pressure of 7 GPa and temperatures of 1800–1900 °C is studied by X-ray topography and selective etching. According to the selective etching data, diamond crystals have two types of dislocations whose outputs on the {100} faces of crystal are associated with two types of etch pits. It has been demonstrated that the etch pits with the side wall inclination angle of about 7° are formed at the outcrop points of full edge dislocations, while the etch pits with the inclination angle of about 4° are associated with 45° mixed dislocations. It has been found that the dislocation structure of diamonds grown at 1900 °C is completely determined by the seed crystals structure and the dislocation density is 105 cm− 2. The dislocation density in the diamond crystals grown at 1800 °C increases by two or three orders of magnitude due to nucleation of dislocations at the seed-overgrown layer interface and in the overgrown layer. The high dislocation density leads to the mosaic structure of crystals and misorientation of single blocks, up to 1°. Local ring clusters of edge dislocations were found to be the dominant source of growth layers on the {100} faces of diamond.
Библиографическая ссылка:
Khokhryakov A.F.
, Nechaev D.V.
, Palyanov Y.N.
, Kuper K.E.
The Dislocation Structure of Diamond Crystals Grown on Seeds in the Mg-C System
Diamond and Related Materials. 2016. V.70. P.1-6. DOI: 10.1016/j.diamond.2016.09.012 WOS Scopus РИНЦ CAPlusCA OpenAlex
The Dislocation Structure of Diamond Crystals Grown on Seeds in the Mg-C System
Diamond and Related Materials. 2016. V.70. P.1-6. DOI: 10.1016/j.diamond.2016.09.012 WOS Scopus РИНЦ CAPlusCA OpenAlex
Даты:
| Поступила в редакцию: | 22 июл. 2016 г. |
| Принята к публикации: | 14 сент. 2016 г. |
| Опубликована в печати: | 1 нояб. 2021 г. |
Идентификаторы БД:
| Web of science: | WOS:000390722400001 |
| Scopus: | 2-s2.0-84987875964 |
| РИНЦ: | 27576373 |
| Chemical Abstracts: | 2016:1552728 |
| Chemical Abstracts (print): | 165:470462 |
| OpenAlex: | W2519466711 |