The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates | Sciact - CRIS-system of Boreskov Institute of Catalysis

The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates Full article

Journal

Nanomaterials
, E-ISSN: 2079-4991

Output data

Year: 2022, Volume: 12, Number: 4, Article number : 670, Pages count : 17 DOI: 10.3390/nano12040670

Tags

Aluminum nitride; Gas cluster ion beam; Material characterization; Surface smoothing; Thin films

Authors

Nikolaev Ivan V. ^1,2 , Geydt Pavel V. ¹ , Korobeishchikov Nikolay G. ² , Kapishnikov Aleksandr V. ^1,3 , Volodin Vladimir A. ^1,4 , Azarov Ivan A. ^1,4 , Strunin Vladimir I. ^5,6 , Gerasimov Evgeny Y. ³

Affiliations

1	Laboratory of Functional Diagnostics of Low-Dimensional Structures for Nanoelectronics, Novosibirsk State University, 630090 Novosibirsk, Russia
2	Department of Applied Physics, Novosibirsk State University, 630090 Novosibirsk, Russia
3	Boreskov Institute of Catalysis, Russian Academy of Sciences (Siberian Branch), 630090 Novosibirsk, Russia
4	Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences (Siberian Branch), 630090 Novosibirsk, Russia
5	Department of Experimental Physics and Radiophysics, Dostoevsky Omsk State University, 644077 Omsk, Russia
6	Institute of Radiophysics and Physical Electronics, Omsk Scientific Center, Russian Academy of Sciences (Siberian Branch), 644024 Omsk, Russia

Funding (3)

1	Russian Science Foundation	21-19-00046
2	Ministry of Science and Higher Education of the Russian Federation	FSUS-2020-0029
3	Ministry of Science and Higher Education of the Russian Federation	FSUS-2020-0039

In this paper, the influence of surface modification on the characteristics and properties of AlN thin films on Si and glass-ceramics substrates is investigated. The surface modification was made at various parameters of argon cluster ions. By using XRD and Raman spectroscopy, it was shown that the obtained AlN films have a hexagonal structure with a characteristic direction of texturing along the c axis and slight deviations from it. A comparison of the AlN surface morphology obtained by atomic force microscopy before and after cluster processing was demonstrated. This demonstrated that the cluster ions with low energy per atom (E/N = 10 eV/atom) have a high efficiency of surface smoothing. A decrease in the intensity of the Raman peaks and an increase in their full-width after bombardment with cluster ions were found, which may be caused by a change in the physicochemical state of the surface. The optical properties, the quality of the boundaries, and the distribution map of the thickness of the functional layer of AlN were investigated by the methods of spectral and spatial resolution ellipsometry. By using the cross-sectional SEM, the direction of crystallite texturing was demonstrated. The influence of argon cluster ion bombardment on the stoichiometry of samples was analyzed by EDX spectroscopy. The results obtained demonstrate the efficiency of the cluster ion smoothing of polycrystalline thin films for microelectronics, particularly when creating surface acoustic wave resonators. © 2022 by the authors. Licensee MDPI, Basel, Switzerland.

Nikolaev I.V. , Geydt P.V. , Korobeishchikov N.G. , Kapishnikov A.V. , Volodin V.A. , Azarov I.A. , Strunin V.I. , Gerasimov E.Y.
The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates
Nanomaterials. 2022. V.12. N4. 670 :1-17. DOI: 10.3390/nano12040670 WOS Scopus РИНЦ ANCAN PMID OpenAlex

Submitted:	Dec 7, 2021
Accepted:	Feb 15, 2022
Published print:	Feb 17, 2022
Published online:	Feb 17, 2022

Web of science:	WOS:000925951800001
Scopus:	2-s2.0-85124988305
Elibrary:	48183700
Chemical Abstracts:	2022:571501
Chemical Abstracts (print):	178:153792
PMID:	35214998
OpenAlex:	W4213134444

DB	Citing
Scopus	4
Elibrary	5
OpenAlex	6
Web of science	4