The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates Full article
Journal |
Nanomaterials
, E-ISSN: 2079-4991 |
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Output data | Year: 2022, Volume: 12, Number: 4, Article number : 670, Pages count : 17 DOI: 10.3390/nano12040670 | ||||||||||||
Tags | Aluminum nitride; Gas cluster ion beam; Material characterization; Surface smoothing; Thin films | ||||||||||||
Authors |
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Affiliations |
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Funding (3)
1 | Russian Science Foundation | 21-19-00046 |
2 | Ministry of Science and Higher Education of the Russian Federation | FSUS-2020-0029 |
3 | Ministry of Science and Higher Education of the Russian Federation | FSUS-2020-0039 |
Abstract:
In this paper, the influence of surface modification on the characteristics and properties of AlN thin films on Si and glass-ceramics substrates is investigated. The surface modification was made at various parameters of argon cluster ions. By using XRD and Raman spectroscopy, it was shown that the obtained AlN films have a hexagonal structure with a characteristic direction of texturing along the c axis and slight deviations from it. A comparison of the AlN surface morphology obtained by atomic force microscopy before and after cluster processing was demonstrated. This demonstrated that the cluster ions with low energy per atom (E/N = 10 eV/atom) have a high efficiency of surface smoothing. A decrease in the intensity of the Raman peaks and an increase in their full-width after bombardment with cluster ions were found, which may be caused by a change in the physicochemical state of the surface. The optical properties, the quality of the boundaries, and the distribution map of the thickness of the functional layer of AlN were investigated by the methods of spectral and spatial resolution ellipsometry. By using the cross-sectional SEM, the direction of crystallite texturing was demonstrated. The influence of argon cluster ion bombardment on the stoichiometry of samples was analyzed by EDX spectroscopy. The results obtained demonstrate the efficiency of the cluster ion smoothing of polycrystalline thin films for microelectronics, particularly when creating surface acoustic wave resonators. © 2022 by the authors. Licensee MDPI, Basel, Switzerland.
Cite:
Nikolaev I.V.
, Geydt P.V.
, Korobeishchikov N.G.
, Kapishnikov A.V.
, Volodin V.A.
, Azarov I.A.
, Strunin V.I.
, Gerasimov E.Y.
The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates
Nanomaterials. 2022. V.12. N4. 670 :1-17. DOI: 10.3390/nano12040670 WOS Scopus РИНЦ ANCAN PMID OpenAlex
The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates
Nanomaterials. 2022. V.12. N4. 670 :1-17. DOI: 10.3390/nano12040670 WOS Scopus РИНЦ ANCAN PMID OpenAlex
Dates:
Submitted: | Dec 7, 2021 |
Accepted: | Feb 15, 2022 |
Published print: | Feb 17, 2022 |
Published online: | Feb 17, 2022 |
Identifiers:
Web of science: | WOS:000925951800001 |
Scopus: | 2-s2.0-85124988305 |
Elibrary: | 48183700 |
Chemical Abstracts: | 2022:571501 |
Chemical Abstracts (print): | 178:153792 |
PMID: | 35214998 |
OpenAlex: | W4213134444 |