Influence of Quantizing Magnetic Field and Rashba Effect on Indium Arsenide Metal-Oxide-Semiconductor Structure Accumulation Capacitance | Sciact - CRIS-система Института катализа

Influence of Quantizing Magnetic Field and Rashba Effect on Indium Arsenide Metal-Oxide-Semiconductor Structure Accumulation Capacitance Научная публикация

Журнал

Journal of Applied Physics
ISSN: 0021-8979 , E-ISSN: 1089-7550

Вых. Данные

Год: 2018, Том: 123, Номер: 17, Номер статьи : 173901, Страниц : 7 DOI: 10.1063/1.5018670

Ключевые слова

Fermi-Dirac statistics; Dielectric properties; Electron density; Spin-orbit interactions; Magnetic fields; Landau levels; Partial differential equations; Semiconductors; Oxides

Авторы

Kovchavtsev A.P. ¹ , Aksenov M.S. ^1,2 , Tsarenko A.V. ¹ , Nastovjak A.E. ¹ , Pogosov A.G. ^1,2 , Pokhabov D.A. ^1,2 , Tereshchenko O.E. ^1,2 , Valisheva N.A. ¹

Организации

1	Rzhanov Institute of Semiconductor Physics
2	Novosibirsk State University

The accumulation capacitance oscillations behavior in the n-InAs metal-oxide-semiconductor structures with different densities of the built-in charge (Dbc) and the interface traps (Dit) at temperature 4.2 K in the magnetic field (B) 2–10 T, directed perpendicular to the semiconductor-dielectric interface, is studied. A decrease in the oscillation frequency and an increase in the capacitance oscillation amplitude are observed with the increase in B. At the same time, for a certain surface accumulation band bending, the influence of the Rashba effect, which is expressed in the oscillations decay and breakdown, is traced. The experimental capacitance-voltage curves are in a good agreement with the numeric simulation results of the self-consistent solution of Schrodinger and Poisson equations in the magnetic field, taking into account the quantization, nonparabolicity of dispersion law, and Fermi-Dirac electron statistics, with the allowance for the Rashba effect. The Landau quantum level broadening in a two-dimensional electron gas (Lorentzian-shaped density of states), due to the electron scattering mechanism, linearly depends on the magnetic field. The correlation between the interface electronic properties and the characteristic scattering times was established.

Kovchavtsev A.P. , Aksenov M.S. , Tsarenko A.V. , Nastovjak A.E. , Pogosov A.G. , Pokhabov D.A. , Tereshchenko O.E. , Valisheva N.A.
Influence of Quantizing Magnetic Field and Rashba Effect on Indium Arsenide Metal-Oxide-Semiconductor Structure Accumulation Capacitance
Journal of Applied Physics. 2018. V.123. N17. 173901 :1-7. DOI: 10.1063/1.5018670 WOS Scopus CAPlusCA OpenAlex

Поступила в редакцию:	8 дек. 2017 г.
Принята к публикации:	12 апр. 2018 г.
Опубликована online:	1 мая 2018 г.
Опубликована в печати:	7 мая 2018 г.

Web of science:	WOS:000431651600007
Scopus:	2-s2.0-85046667792
Chemical Abstracts:	2018:879333
Chemical Abstracts (print):	168:501267
OpenAlex:	W2799995897

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