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Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi2Se3 and Sb2Te3 Topological Insulators Научная публикация

Журнал Journal of Experimental and Theoretical Physics
ISSN: 1063-7761 , E-ISSN: 1090-6509
Вых. Данные Год: 2018, Том: 126, Номер: 4, Страницы: 535-540 Страниц : 6 DOI: 10.1134/S1063776118040088
Ключевые слова Antimony compounds; Binding energy; Bismuth compounds; Core levels; Electric insulators; Electronic states; Interface states; Interfaces (materials); Photoelectron spectroscopy; Quantum computers; Quantum theory; Selenium compounds; Tellurium compounds; Topology; Ultrathin films
Авторы Surnin Yu.A. 1 , Klimovskikh I.I. 1 , Sostina D.M. 1 , Kokh K.A. 2,3 , Tereshchenko O.E. 3,4 , Shikin A.M. 1
Организации
1 St. Petersburg State University, St. Petersburg, 198504 Russia
2 Sobolev Institute of Geology and Mineralogy, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia
3 Novosibirsk State University, Novosibirsk, 630090 Russia
4 Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia

Реферат: The effect of an ultrathin Pb film deposited on the surface of Bi2Se3 and Sb2Te3 compounds on the electronic state structure of topological insulators is studied experimentally by the angle-resolved photoemission spectroscopy (ARPES) technique. The following features are revealed: formation of two-dimensional quantum-well states in the near-surface region, an increase in the binding energy of the Dirac cone and the core levels, and a simultaneous electronic states intensity redistribution in the system in photoemission spectra. The results obtained show that topological states may coexist at the interface between studied materials and a superconductor, which seems to be promising for application in quantum computers.
Библиографическая ссылка: Surnin Y.A. , Klimovskikh I.I. , Sostina D.M. , Kokh K.A. , Tereshchenko O.E. , Shikin A.M.
Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi2Se3 and Sb2Te3 Topological Insulators
Journal of Experimental and Theoretical Physics. 2018. V.126. N4. P.535-540. DOI: 10.1134/S1063776118040088 WOS Scopus CAPlus OpenAlex
Оригинальная: Сурнин Ю.А. , Климовских И.И. , Состина Д.М. , Кох К.А. , Терещенко О.Е. , Шикин А.М.
Влияние ультратонких пленок Pb на поверхностные топологические и квантово-размерные состояния топологических изоляторов Bi2Se3 и Sb2Te3
Журнал экспериментальной и теоретической физики. 2018. №4. С.649-655. DOI: 10.7868/s0044451018040120 OpenAlex
Даты:
Поступила в редакцию: 18 дек. 2017 г.
Опубликована в печати: 1 апр. 2018 г.
Опубликована online: 2 июн. 2018 г.
Идентификаторы БД:
Web of science: WOS:000434476400011
Scopus: 2-s2.0-85048200284
Chemical Abstracts: 2018:1087433
OpenAlex: W2806971864
Цитирование в БД:
БД Цитирований
Scopus 8
OpenAlex 8
Web of science 7
Альметрики: