Memristors Based on Many-Layer Non-Stoichiometric Germanosilicate Glass Films | Sciact - CRIS-система Института катализа

Memristors Based on Many-Layer Non-Stoichiometric Germanosilicate Glass Films Научная публикация

Журнал

Electronics
ISSN: 2079-9292

Вых. Данные

Год: 2023, Том: 12, Номер: 4, Номер статьи : 873, Страниц : 14 DOI: 10.3390/electronics12040873

Ключевые слова

memristor; germanosilicate glass; germanium; resistance states; thin films

Авторы

Yushkov Ivan D. ^1,2 , Yin Liping ² , Kamaev Gennadiy N. ¹ , Prosvirin Igor P. ³ , Geydt Pavel V. ^1,2 , Vergnat Michel ⁴ , Volodin Vladimir A. ^1,2

Организации

1	Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Lavrentyev Ave. 13, 630090 Novosibirsk, Russia
2	Laboratory of Functional Diagnostics of Low–Dimensional Structures for Nanoelectronics, Novosibirsk State University, Pirogova Str. 2, 630090 Novosibirsk, Russia
3	Boreskov Institute of Catalysis, Siberian Branch of the Russian Academy of Sciences, Prospect Lavrentieva, 5, 630090 Novosibirsk, Russia
4	CNRS, IJL, Université de Lorraine, F-54000 Nancy, France

Информация о финансировании (2)

1	Министерство науки и высшего образования Российской Федерации (с 15 мая 2018)	FSUS-2020-0029
2	Министерство науки и высшего образования Российской Федерации (с 15 мая 2018)	075-12-2021-697

Nonstoichiometric GeSixOy glass films and many-layer structures based on them were obtained by high-vacuum electron beam vapor deposition (EBVD). Using EBVD, the GeO2, SiO, SiO2, or Ge powders were co-evaporated and deposited onto a cold (100 °C) p+-Si(001) substrate with resistivity ρ = 0.0016 ± 0.0001 Ohm·cm. The as-deposited samples were studied by Fourier-transformed infrared spectroscopy, atomic force microscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy. A transparent indium–tin–oxide (ITO) contact was deposited as the top electrode, and memristor metal–insulator–semiconductor (MIS) structures were fabricated. The current–voltage characteristics (I–V), as well as the resistive switching cycles of the MIS, have been studied. Reversible resistive switching (memristor effect) was observed for one-layer GeSi0.9O2.8, two-layer GeSi0.9O1.8/GeSi0.9O2.8 and GeSi0.9O1.8/SiO, and three-layer SiO2/a–Ge/GeSi0.9O2.8 MIS structures. For a one-layer MIS structure, the number of rewriting cycles reached several thousand, while the memory window (the ratio of currents in the ON and OFF states) remained at 1–2 orders of magnitude. Intermediate resistance states were observed in many-layer structures. These states may be promising for use in multi-bit memristors and for simulating neural networks. In the three-layer MIS structure, resistive switching took place quite smoothly, and hysteresis was observed in the I–V characteristics; such a structure can be used as an “analog” memristor.

Yushkov I.D. , Yin L. , Kamaev G.N. , Prosvirin I.P. , Geydt P.V. , Vergnat M. , Volodin V.A.
Memristors Based on Many-Layer Non-Stoichiometric Germanosilicate Glass Films
Electronics. 2023. V.12. N4. 873 :1-14. DOI: 10.3390/electronics12040873 WOS Scopus РИНЦ CAPlus OpenAlex

Поступила в редакцию:	20 янв. 2023 г.
Принята к публикации:	7 февр. 2023 г.
Опубликована в печати:	9 февр. 2023 г.
Опубликована online:	9 февр. 2023 г.

Web of science:	WOS:000939277200001
Scopus:	2-s2.0-85149199414
РИНЦ:	54279775
Chemical Abstracts:	2023:489167
OpenAlex:	W4319787001

БД	Цитирований
Scopus	4
Web of science	2
OpenAlex	4
РИНЦ	3