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SiC Formation on the Carbon Nanotube Decorated with Silicon Nanoparticles Full article

Journal Diamond and Related Materials
ISSN: 0925-9635 , E-ISSN: 1879-0062
Output data Year: 2023, Volume: 137, Article number : 110113, Pages count : 13 DOI: 10.1016/j.diamond.2023.110113
Tags Silicon carbide (SiC); Multi-walled carbon nanotube; Composite; Avrami-Erofeev model; Electrical conductivity
Authors Zavorin A.V. 1,2 , Kuznetsov V.L. 1 , Moseenkov S.I. 1 , Selyutin A.G. 3 , Ishchenko A.V. 1 , Tsendsuren Tsog-Ochir 2
Affiliations
1 Boreskov Institute of Catalysis SB RAS, Lavrentieva 5, Novosibirsk 630090, Russia
2 Novosibirsk State University, Pirogova 2, Novosibirsk 630090, Russia
3 Synchrotron radiation facility SKIF, Boreskov Institute of Catalysis SB RAS, 630559, Nikol'skiy Prospekt 1, Kol'tsovo, Russia

Funding (1)

1 Ministry of Science and Higher Education of the Russian Federation 0239-2021-0010

Abstract: Ex situ methods (TEM, XRD, and Raman spectroscopy) have been used to study the processes occurring at the multi-walled carbon nanotube/silicon interfaces (MWCNT/Si) during heat treatment of MWCNT-Si composites containing highly dispersed Si particles deposited on the surface of MWCNTs by CVD method. It has been established that during heat treatment, starting from 900 °C, the formation of SiC particles occurs. A further increase in temperature leads to the formation of polycrystalline SiC particles and a significant shortening of MWCNTs due to the reaction between Si particles and the surface of MWCNTs. It is shown that one can control the size of the formed SiC crystallites by varying the time and temperature of heat treatment. The kinetic dependences of the SiC formation process were studied within the Avrami-Erofeev model. The activation energy for the formation of SiC is estimated at 470 kJ/mol. The influence of heat treatment on the electrical conductivity and porosity of MWCNT-Si composites in the pressure range of 25–175 MPa has been studied.
Cite: Zavorin A.V. , Kuznetsov V.L. , Moseenkov S.I. , Selyutin A.G. , Ishchenko A.V. , Tsendsuren T-O.
SiC Formation on the Carbon Nanotube Decorated with Silicon Nanoparticles
Diamond and Related Materials. 2023. V.137. 110113 :1-13. DOI: 10.1016/j.diamond.2023.110113 WOS Scopus РИНЦ AN OpenAlex publication_identifier_short.sciact_skif_identifier_type
Dates:
Submitted: Mar 17, 2023
Accepted: Jun 7, 2023
Published online: Jun 8, 2023
Published print: Aug 1, 2023
Identifiers:
Web of science: WOS:001024441900001
Scopus: 2-s2.0-85163785228
Elibrary: 54384092
Chemical Abstracts: 2023:1231795
OpenAlex: W4379876514
publication_identifier.sciact_skif_identifier_type: 2224
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