Formation of Well-Ordered Surfaces of Bi2-xSbxTe3-ySey Topological Insulators Using Wet Chemical Treatment | Sciact - CRIS-system of Boreskov Institute of Catalysis

Formation of Well-Ordered Surfaces of Bi2-xSbxTe3-ySey Topological Insulators Using Wet Chemical Treatment Full article

Journal

Applied Surface Science
ISSN: 0169-4332

Output data

Year: 2024, Volume: 649, Article number : 159122, Pages count : 9 DOI: 10.1016/j.apsusc.2023.159122

Tags

Surface treatment; Topological insulator; Photoemission; Fermi level; Surface state

Authors

Tarasov A.S. ¹ , Kumar N. ¹ , Golyashov V.A. ^2,1,3 , Akhundov I.O. ¹ , Ishchenko D.V. ¹ , Kokh K.A. ⁴ , Bazhenov A.O. ^2,1 , Stepina N.P. ¹ , Tereshchenko O.E. ^2,1,3

Affiliations

1	Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
2	Novosibirsk State University, Novosibirsk 630090, Russia
3	Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Koltsovo 630559, Russia
4	Sobolev Institute of Geology and Mineralogy, SB RAS, Novosibirsk 630090, Russia

The surface preparation of topological insulators (TIs) is a critical task in order to realize their efficient applications. A chemical treatment in an anhydrous solution of hydrogen chloride in isopropanol (HCl-iPA) and a subsequent annealing at relatively low temperature in ultrahigh vacuum (UHV) was successfully used for the surface preparation of bulk 3D (0 0 0 1) TIs Bi2Te3, Sb2Te3, Bi2Se3 and an MBE - grown Bi2-xSbxTe3-ySey (BSTS) thin films. The surface treatment showed a significant modification of the initial TI surfaces, which was free from the structural disorder, oxidation and chemical impurities determined by X-ray photoelectron spectroscopy and low-energy electron diffraction. The insulating nontrivial bulk gap and well resolved gapless surface states with a linear dispersion of a massless Dirac cone were observed by angle-resolved photoelectron spectroscopy (ARPES). In the BSTS film, the Fermi level is located within the bulk band gap. The negative magnetoconductance corresponding to weak antilocalization demonstrated the contribution of the surface states of BSTS, that promise to be protected from backscattering. The surface treatment method proposed in this work is highly efficient for both bulk and thin TI films that can be useful for the deposition of an insulators/metals to fabricate transistor and spin valve systems.

Tarasov A.S. , Kumar N. , Golyashov V.A. , Akhundov I.O. , Ishchenko D.V. , Kokh K.A. , Bazhenov A.O. , Stepina N.P. , Tereshchenko O.E.
Formation of Well-Ordered Surfaces of Bi2-xSbxTe3-ySey Topological Insulators Using Wet Chemical Treatment
Applied Surface Science. 2024. V.649. 159122 :1-9. DOI: 10.1016/j.apsusc.2023.159122 WOS Scopus РИНЦ AN OpenAlex publication_identifier_short.sciact_skif_identifier_type

Submitted:	Sep 23, 2023
Accepted:	Nov 11, 2023
Published online:	Dec 14, 2023
Published print:	Mar 15, 2024

Web of science:	WOS:001140301600001
Scopus:	2-s2.0-85181891616
Elibrary:	56442994
Chemical Abstracts:	2023:2644307
OpenAlex:	W4389720319
publication_identifier.sciact_skif_identifier_type:	1552

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OpenAlex	5
Scopus	5
Web of science	5