Raman Scattering Spectroscopy of MBE Grown Thin Film Topological Insulator Bi2-xSbxTe3-ySey Научная публикация
| Журнал |
PCCP: Physical Chemistry Chemical Physics
ISSN: 1463-9076 , E-ISSN: 1463-9084 |
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| Вых. Данные | Год: 2024, Том: 26, Номер: 17, Страницы: 13497-13505 Страниц : 9 DOI: 10.1039/d4cp01169d | ||||||||||||||||
| Ключевые слова | Antimony compounds; Bismuth compounds; Crystal symmetry; Electric insulators; Epitaxial growth; Raman scattering; Raman spectroscopy; Selenium compounds; Silicon; Silver; Substrates; Tellurium compounds; Thin films; Topological insulators | ||||||||||||||||
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Информация о финансировании (4)
| 1 | Российский научный фонд | 22-12-20024 (122063000001-1) |
| 2 | Министерство науки и высшего образования Российской Федерации (с 15 мая 2018) | FWUR-2024-0042 |
| 3 | Министерство науки и высшего образования Российской Федерации (с 15 мая 2018) | FWNG-2024-0023 (124041700106-2)(075-03-2024-295) |
| 4 | Министерство науки и высшего образования Российской Федерации (с 15 мая 2018) | 075-15-2021-1349 (121111100031-6) |
Реферат:
BSTS epitaxial thin film topological insulators were grown using the MBE technique on two different types of substrates i.e., Si (111) and SiC/graphene with Bi0.7Sb1.6Te1.8Se0.9 and Bi0.9Sb1.5Te1.8Se1.1, respectively. The crystallographic properties of BSTS films were investigated via X-ray diffraction, which showed the strongest reflections from the (0 0 l) facets corresponding to the rhombohedral phase. Superior epitaxial growth, homogeneous thickness, smooth surfaces, and larger unit cell parameters were observed for the films grown on the Si substrate. Polarization dependent Raman spectroscopy showed a weak appearance of the Ag mode in cross--polarized geometry. In contrast, a strong Eg mode was observed in both parallel and cross-polarized geometries which correspond to the rhombohedral crystal symmetry of BSTS films. A redshift of Ag and Eg modes was observed in the Raman spectra of BSTS films grown on the Si substrate, compared to those on SiC/graphene, which was directly associated with the unit cell parameter and composition of the films. Raman spectra showed four fundamental modes with asymmetric line shape, and deconvolution of the peaks resulted in additional modes in both the BSTS thin films. The sum of relative ratios of linewidths of fundamental modes (Ag and Eg) of BSTS films grown on Si substrate was lower, indicating a more ordered structure with lower contribution of defects as compared to BSTS film grown on SiC/graphene substrate.
Библиографическая ссылка:
Kumar N.
, Surovtsev N.V.
, Yunin P.A.
, Ishchenko D.V.
, Milekhin I.A.
, Lebedev S.P.
, Lebedev A.A.
, Tereshchenko O.E.
Raman Scattering Spectroscopy of MBE Grown Thin Film Topological Insulator Bi2-xSbxTe3-ySey
PCCP: Physical Chemistry Chemical Physics. 2024. V.26. N17. P.13497-13505. DOI: 10.1039/d4cp01169d WOS Scopus CAPlus PMID OpenAlex СКИФ ID
Raman Scattering Spectroscopy of MBE Grown Thin Film Topological Insulator Bi2-xSbxTe3-ySey
PCCP: Physical Chemistry Chemical Physics. 2024. V.26. N17. P.13497-13505. DOI: 10.1039/d4cp01169d WOS Scopus CAPlus PMID OpenAlex СКИФ ID
Даты:
| Поступила в редакцию: | 20 мар. 2024 г. |
| Опубликована в печати: | 7 мая 2024 г. |
| Принята к публикации: | 11 мая 2024 г. |
| Опубликована online: | 12 мая 2024 г. |
Идентификаторы БД:
| Web of science: | WOS:001206309700001 |
| Scopus: | 2-s2.0-85190973019 |
| Chemical Abstracts: | 2024:901308 |
| PMID (PubMed): | 38651229 |
| OpenAlex: | W4394772138 |
| СКИФ ID: | 2269 |