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MOCVD Growth and Study of Magnetic Co Films Научная публикация

Журнал Surface Engineering
ISSN: 0267-0844 , E-ISSN: 1743-2944
Вых. Данные Год: 2016, Том: 32, Номер: 1, Страницы: 8-14 Страниц : 7 DOI: 10.1179/1743294414Y.0000000424
Ключевые слова Co films, Co precursor, Magnetic characteristics, MOCVD, Vapour pressure
Авторы Dorovskikh S.I. 1 , Hairullin R.R. 2,3 , Sysoev S.V. 1 , Kriventsov V.V. 4 , Panin A.V. 2 , Shubin Y.V. 1,5 , Morozova N.B. 1 , Gelfond N.V. 1 , Korenev S.V. 1,5
Организации
1 Nikolaev Institute of Inorganic Chemistry, Siberian Branch of Russian Academy of Sciences, aven. Lavrentiev 3, Novosibirsk 630090, Russia
2 Institute of Strength Physics and Materials Science, Siberian Branch of Russian Academy of Science, 2/1 Akademicheskii pr., Tomsk 634021, Russia
3 National Research Tomsk Polytechnic University, 30 Lenina av., Tomsk 634050, Russia
4 Boreskov Institute of Catalysis, Siberian Branch of Russian Academy ofSciences, aven. Lavrentiev 5, Novosibirsk 630090, Russia
5 Novosibirsk State University, Pirogova Str. 2, Novosibirsk 630090, Russia

Информация о финансировании (1)

1 Министерство образования и науки Российской Федерации 14.604.21.0080

Реферат: The Co(N’acN’ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal–organic chemical vapour deposition. This chelate exhibits good volatility ln (P/P°) = 26·45–14006·7/T(K) at moderate temperature values (382–427 K). Co films were grown on Si (100) substrates and studied by X-ray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.
Библиографическая ссылка: Dorovskikh S.I. , Hairullin R.R. , Sysoev S.V. , Kriventsov V.V. , Panin A.V. , Shubin Y.V. , Morozova N.B. , Gelfond N.V. , Korenev S.V.
MOCVD Growth and Study of Magnetic Co Films
Surface Engineering. 2016. V.32. N1. P.8-14. DOI: 10.1179/1743294414Y.0000000424 WOS Scopus РИНЦ CAPlus OpenAlex
Даты:
Поступила в редакцию: 14 авг. 2014 г.
Принята к публикации: 13 нояб. 2014 г.
Опубликована online: 27 нояб. 2014 г.
Опубликована в печати: 2 янв. 2016 г.
Идентификаторы БД:
Web of science: WOS:000369429900002
Scopus: 2-s2.0-84959360718
РИНЦ: 26972024
Chemical Abstracts: 2016:166647
OpenAlex: W2007808179
Цитирование в БД:
БД Цитирований
Web of science 4
Scopus 4
РИНЦ 3
OpenAlex 7
Альметрики: