Polarization-Resolved Raman Resonant Excitation of Surface and Bulk Electronic Bands and Phonons in MBE Grown Topological Insulator Thin Films | Sciact - CRIS-system of Boreskov Institute of Catalysis

Polarization-Resolved Raman Resonant Excitation of Surface and Bulk Electronic Bands and Phonons in MBE Grown Topological Insulator Thin Films Full article

Journal

PCCP: Physical Chemistry Chemical Physics
ISSN: 1463-9076 , E-ISSN: 1463-9084

Output data

Year: 2024, Volume: 26, Pages: 29036-29047 Pages count : 12 DOI: 10.1039/d4cp02994a

Tags

Electric insulators; Electron-phonon interactions; Excited states; Polarization; Raman scattering; Statistical mechanics; Surface scattering; Tellurium compounds

Authors

Kumar N. ^1,2 , Ishchenko D.V. ¹ , Milekhin I.A. ^1,3 , Yunin P.A. ^4,5 , Kyrova E.D. ^1,6 , Korsakov A.V. ⁷ , Tereshchenko O.E. ^1,8

Affiliations

1	Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, 630090, Russia
2	Tomsk State University, 36 Lenin Ave., Tomsk, 634050, Russia
3	Novosibirsk State University, Novosibirsk, 630090, Russia
4	Institute for Physics of Microstructures, RAS, Afonino, Nizhny Novgorod 603087, Russia
5	Faculty of Radiophysics, Lobachevsky State University, Nizhny Novgorod 603950, Russia
6	Novosibirsk State Technical University, Novosibirsk, 630073, Russia
7	V.S. Sobolev Institute of Geology and Mineralogy, SB RAS, Novosibirsk, 630090, Russia
8	Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, SB, RAS, Koltsovo 630559, Russia

Funding (4)

1	Ministry of Science and Higher Education of the Russian Federation	FSUS-2024-0020
2	Ministry of Science and Higher Education of the Russian Federation
3	Ministry of Science and Higher Education of the Russian Federation	FWUR-2024-0042
4	Ministry of Science and Higher Education of the Russian Federation	FWZN-2022-0024 (122041400241-5)

Interaction of phonons with Dirac-like electronic states sets the fundamental limit of electron transport in topological insulators (TIs). Polarization-resolved and resonant Raman scattering of bulk and surface electronic excitation and vibrational modes in Bi2Te3 and Bi2xSbxTe3ySey (BSTS) thin films was investigated. At photon energies (Ep) of 1.57 and 2.54 eV, A1 1g and A2 1g (LO) modes in Bi2Te3 and BSTS were resonantly excited owing to interband optical excitations of the surface Dirac state (DS) and bulk conduction band (CB), respectively. At room temperature, the resonance of the surface phonon of Raman and IR active modes E1 u (LO) and A1 1u (LO) was observed in Bi2Te3 because of interband excitation of bulk CB, and interband transition of DS resonantly excited the A2 1u (LO) surface phonon in BSTS. A Fano lineshape suggested interference in the presence of electron–phonon coupling of the surface states.

Kumar N. , Ishchenko D.V. , Milekhin I.A. , Yunin P.A. , Kyrova E.D. , Korsakov A.V. , Tereshchenko O.E.
Polarization-Resolved Raman Resonant Excitation of Surface and Bulk Electronic Bands and Phonons in MBE Grown Topological Insulator Thin Films
PCCP: Physical Chemistry Chemical Physics. 2024. V.26. P.29036-29047. DOI: 10.1039/d4cp02994a WOS Scopus AN PMID OpenAlex

Submitted:	Jul 29, 2024
Accepted:	Nov 3, 2024
Published online:	Nov 5, 2024
Published print:	Dec 24, 2024

Web of science:	WOS:001356444100001
Scopus:	2-s2.0-85209236710
Chemical Abstracts:	2024:2526382
PMID:	39552495
OpenAlex:	W4404084083

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