Growth and Characterization of Mixed Oxide Hf1−xScxOy (0 ≤ x ≤ 1) Films Prepared by the Atomic Layer Deposition Method | Sciact - CRIS-system of Boreskov Institute of Catalysis

Growth and Characterization of Mixed Oxide Hf1−xScxOy (0 ≤ x ≤ 1) Films Prepared by the Atomic Layer Deposition Method Full article

Journal

Journal of Electronic Materials
ISSN: 0361-5235

Output data

Year: 2025, DOI: 10.1007/s11664-025-11865-z

Tags

Complex oxide film; ALD deposition; XRD; XPS; ellipsometry; band structure

Authors

Atuchin V.V. ^1,2 , Lebedev M.S. ^3,4 , Gromilov S.A. ⁵ , Korolkov I.V. ⁵ , Perevalov T.V. ⁶ , Prosvirin I.P. ⁷

Affiliations

1	Research and Development Department, Kemerovo State University, Kemerovo, Russia 650000
2	Laboratory of Optical Materials and Structures, Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia 630090
3	Laboratory of Metalorganic Compounds for Dielectric Material Deposition, Nikolaev Institute of Inorganic Chemistry, Novosibirsk, Russia 630090
4	Laboratory of Functional Films and Coatings, Nikolaev Institute of Inorganic Chemistry, Novosibirsk, Russia 630090
5	Laboratory of Crystal Chemistry, Nikolaev Institute of Inorganic Chemistry, Novosibirsk, Russia 630090
6	Laboratory of Silicon Material Science, Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia 630090
7	Surface Science Laboratory, Boreskov Institute of Catalysis, Novosibirsk, Russia 630090

Funding (2)

1	Ministry of Science and Higher Education of the Russian Federation	FWUZ-2025-0004 (125021001790-0)(075-03-2025-190)
2	Ministry of Science and Higher Education of the Russian Federation	FWUZ-2025-0003 (125021302132-4)(075-03-2025-190)

Optical-quality Hf1−xScxOy (0 ≤ x ≤ 1) films were deposited on Si(100) substrates by the atomic layer deposition (ALD) method using tetrakis(ethylmethylamido)hafnium(IV) [Hf(NC2H5CH3)4, TEMAH] and tris(methylcyclopentadienyl)scandium(III) [Sc(C5H4CH3)3, Sc(MeCp)3] as metal precursors. H2O vapor was applied as an oxygen source. The specific growth kinetics were observed for 0 < x < 1. The structural properties of the as-deposited films were evaluated by x-ray diffraction (XRD) analysis, and low-temperature crystallization during ALD deposition was observed. The chemical composition of the deposited films was determined by x-ray photoelectron spectroscopy, including chemical bonding analysis. For comparison, the band structure was calculated by density functional theory (DFT) methods for selected film compositions. The dispersive optical constants were obtained by spectroscopic ellipsometry over the photon energy range of 1.12–4.96 eV. The wide-range tuning of optical constants was reached in the Hf1−xScxOy (0 ≤ x ≤ 1) films by varying the chemical composition. Thus, it was shown that Hf1−xScxOy (0 ≤ x ≤ 1) films can be successfully grown by ALD, and they are promising for use in optoelectronic structures.

Atuchin V.V. , Lebedev M.S. , Gromilov S.A. , Korolkov I.V. , Perevalov T.V. , Prosvirin I.P.
Growth and Characterization of Mixed Oxide Hf1−xScxOy (0 ≤ x ≤ 1) Films Prepared by the Atomic Layer Deposition Method
Journal of Electronic Materials. 2025. DOI: 10.1007/s11664-025-11865-z WOS Scopus

Submitted:	Jun 12, 2024
Accepted:	Feb 20, 2025
Published online:	Mar 12, 2025

Web of science:	WOS:001443002500001
Scopus:	2-s2.0-105000044793

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