Oxygen Transfer during the Vacuum Annealing of an Ultrathin Sn/Si Epitaxial Layer | Sciact - CRIS-система Института катализа

Oxygen Transfer during the Vacuum Annealing of an Ultrathin Sn/Si Epitaxial Layer Научная публикация

Журнал

Nanobiotechnology Reports
ISSN: 2635-1676 , E-ISSN: 2635-1684

Вых. Данные

Год: 2024, Том: 19, Номер: S1, Страницы: S93-S97 Страниц : 5 DOI: 10.1134/s2635167625600130

Ключевые слова

XPS INVESTIGATIONS; NANOSTRUCTURES; NANOWIRES; XANES

Авторы

Boikov N.I. ¹ , Chuvenkova O.A. ¹ , Parinova E.V. ¹ , Kurganskii S.I. ¹ , Makarova A.A. ² , Smirnov D.A. ³ , Chumakov R.G. ⁴ , Lebedev A.M. ⁴ , Titova S.S. ¹ , Suprun E.A. ⁵ , Gerasimov E.Yu. ⁵ , Turishchev S.Yu. ¹

Организации

1	Voronezh State University, Voronezh, 394018 Russia
2	Free University of Berlin, Berlin, 14195 Germany
3	Dresden University of Technology, Dresden, 01069 Germany
4	National Research Center “Kurchatov Institute,” Moscow, 123182 Russia
5	Federal Research Center Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia

Информация о финансировании (1)

Российский научный фонд

23-22-00465 (123020800105-0)

The features of the morphology and physical–chemical state of five epitaxially formed monolayers of tin at the interface with a thin silicon buffer layer on a silicon substrate and transformation of the epitaxial structure as a result of in situ thermal annealing from the point of view of the charge state of silicon atoms are studied. X-ray photoelectron spectroscopy using synchrotron radiation and scanning electron microscopy are used. The possibility of oxygen atom transport to the silicon buffer layer during storage of the structures in laboratory conditions is shown. Annealing in ultrahigh vacuum causes a restructuring of the surface of such structures, which is accompanied by oxygen atom redistribution to the exposed surface of the epitaxial silicon buffer with the formation of a thin SiO2 layer and the assembly of tin into clusters on this surface.

Boikov N.I. , Chuvenkova O.A. , Parinova E.V. , Kurganskii S.I. , Makarova A.A. , Smirnov D.A. , Chumakov R.G. , Lebedev A.M. , Titova S.S. , Suprun E.A. , Gerasimov E.Y. , Turishchev S.Y.
Oxygen Transfer during the Vacuum Annealing of an Ultrathin Sn/Si Epitaxial Layer
Nanobiotechnology Reports. 2024. V.19. NS1. P.S93-S97. DOI: 10.1134/s2635167625600130 WOS Scopus РИНЦ OpenAlex

Поступила в редакцию:	28 нояб. 2024 г.
Принята к публикации:	3 дек. 2024 г.
Опубликована online:	24 мар. 2025 г.

Web of science:	WOS:001451158900004
Scopus:	2-s2.0-105000907103
РИНЦ:	80504892
OpenAlex:	W4408777675

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